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XP1022-QF-0N00

更新时间： 2024-09-18 03:13:59
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器功率放大器
页数 文件大小 规格书
8页 868K
描述
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN

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XP1022-QF-0N00 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
构造：COMPONENT增益：20 dB
最大输入功率 (CW)：19 dBmJESD-609代码：e3
最大工作频率：25000 MHz最小工作频率：17000 MHz
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XP1022-QF-0N00 数据手册

 浏览型号XP1022-QF-0N00的Datasheet PDF文件第2页浏览型号XP1022-QF-0N00的Datasheet PDF文件第3页浏览型号XP1022-QF-0N00的Datasheet PDF文件第4页浏览型号XP1022-QF-0N00的Datasheet PDF文件第5页浏览型号XP1022-QF-0N00的Datasheet PDF文件第6页浏览型号XP1022-QF-0N00的Datasheet PDF文件第7页 
17.0-25.0 GHz GaAs MMIC  
Power Amplifier, QFN  
November 2006 - Rev 15-Nov-06  
P1022-QF  
Features  
Excellent Transmit Output Stage  
Temperature Compensated Output Detector  
On-Chip ESD Protection  
20.0 dB Small Signal Gain  
+28.0 dBm P1dB Compression Point  
RoHS Compliant SMD, 4x4 mm QFN Package  
100% RF, DC and Output Power Testing  
General Description  
Mimix Broadband’s three stage 17.0-25.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 20.0  
dB with a +28.0 dBm P1dB output compression point  
across much of the band.The device also includes a  
temperature compensated output power detector.  
This MMIC uses Mimix Broadband’s 0.15 µm GaAs  
PHEMT device model technology, and is based upon  
electron beam lithography to ensure high  
repeatability and uniformity.The device comes in a  
RoHS compliant 4x4mm QFN Surface Mount Package  
offering excellent RF and thermal properties.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
145, 290, 580 mA  
+0.3 VDC  
+19.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Graph1  
Channel Temperature (Tch) MTTF Graph1  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Units  
GHz  
dB  
Min.  
17.0  
-
Typ.  
-
9.0  
Max.  
25.0  
-
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
dB  
dB  
dB  
dB  
dBm  
VDC  
VDC  
mA  
mA  
mA  
VDC  
-
-
-
-
-
-
10.0  
20.0  
+/-2.0  
50.0  
+28.0  
+5.0  
-0.7  
100  
200  
400  
0.38  
-
-
-
-
-
Reverse Isolation (S12)  
2
Output Power for 1dB Compression (P1dB)  
Drain Bias Voltage (Vd1,2,3) (Vdet)  
Gate Bias Voltage (Vg1,2,3)  
Supply Current (Id1) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id2) (Vd=5.0V,Vg=-0.7V Typical)  
Supply Current (Id3) (Vd=5.0V,Vg=-0.7V Typical)  
Detector (diff) Output at 20 dBm3  
+5.5  
0.0  
120  
240  
480  
-
-1.0  
-
-
-
-
(2) Measured using constant current.  
(3) Measured with Vdet=5.0V  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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