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XL1005-BD-000V PDF预览

XL1005-BD-000V

更新时间: 2024-02-20 06:22:10
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器
页数 文件大小 规格书
6页 154K
描述
5.0-20.0 GHz GaAs MMIC Low Noise Amplifier

XL1005-BD-000V 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.72Is Samacsys:N
构造:COMPONENT增益:13 dB
最大输入功率 (CW):15 dBmJESD-609代码:e3
最大工作频率:20000 MHz最小工作频率:5000 MHz
射频/微波设备类型:WIDE BAND LOW POWER端子面层:Matte Tin (Sn)
Base Number Matches:1

XL1005-BD-000V 数据手册

 浏览型号XL1005-BD-000V的Datasheet PDF文件第2页浏览型号XL1005-BD-000V的Datasheet PDF文件第3页浏览型号XL1005-BD-000V的Datasheet PDF文件第4页浏览型号XL1005-BD-000V的Datasheet PDF文件第5页浏览型号XL1005-BD-000V的Datasheet PDF文件第6页 
5.0-20.0 GHz GaAs MMIC  
Low Noise Amplifier  
April 2007 - Rev 19-Apr-07  
L1005-BD  
Features  
Chip Device Layout  
Wideband Low Noise Amplifier  
13.0 dB Small Signal Gain  
2.2 dB Noise Figure  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s single stage 5.0-20.0 GHz GaAs  
MMIC low noise amplifier has a small signal gain of 13.0  
dB with a noise figure of 2.2 dB across the band.This  
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT  
device model technology, and is based upon electron  
beam lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes and  
gold metallization to allow either a conductive epoxy  
or eutectic solder die attach process.This device is well  
suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd1)  
Supply Current (Id)  
Gate Bias Voltage (Vg1)  
Gate Bias Voltage (Vg2)  
Input Power (Pin)  
+5.5 VDC  
120 mA  
+0.3 VDC  
TBD  
+15.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
1
Operating Temperature (Ta) -55 to MTTF Table  
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
VDC  
VDC  
VDC  
mA  
Min.  
5.0  
Typ.  
-
7.0  
Max.  
20.0  
Frequency Range (f)  
Input Return Loss (S11)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Output Return Loss (S22)  
14.0  
13.0  
+/-2.0  
TBD  
2.2  
+16.0  
+26.0  
+5.0  
-0.3  
+1.5  
30  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Reverse Isolation (S12)  
Noise Figure (NF)  
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg1)  
Gate Bias Voltage (Vg2)  
Supply Current (Id) (Vd=5.0V,Vg1=-0.3V,Vg2=1.5V)  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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