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XL1003-BD

更新时间： 2024-01-31 03:55:18
品牌 Logo 应用领域
MIMIX 放大器
页数 文件大小 规格书
6页 175K
描述
24.0-40.0 GHz GaAs MMIC Low Noise Amplifier

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中文翻译

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XL1003-BD 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：DIE OR CHIP
Reach Compliance Code：unknown风险等级：5.17
Is Samacsys：N构造：COMPONENT
增益：15 dB最大输入功率 (CW)：-1 dBm
JESD-609代码：e3最大工作频率：40000 MHz
最小工作频率：24000 MHz封装等效代码：DIE OR CHIP
电源：5 V射频/微波设备类型：WIDE BAND LOW POWER
子类别：RF/Microwave Amplifiers最大压摆率：65 mA
技术：GAAS端子面层：Matte Tin (Sn)
Base Number Matches：1

XL1003-BD 数据手册

 浏览型号XL1003-BD的Datasheet PDF文件第2页浏览型号XL1003-BD的Datasheet PDF文件第3页浏览型号XL1003-BD的Datasheet PDF文件第4页浏览型号XL1003-BD的Datasheet PDF文件第5页浏览型号XL1003-BD的Datasheet PDF文件第6页 
24.0-40.0 GHz GaAs MMIC  
Low Noise Amplifier  
April 2007 - Rev 19-Apr-07  
L1003-BD  
Features  
Chip Device Layout  
Balanced Output Stage  
Excellent Input/Output Match  
Self-biased Architecture  
24.0 dB Small Signal Gain  
1.7 dB Noise Figure  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage output balanced  
24.0-40.0 GHz GaAs MMIC low noise amplifier has a  
small signal gain of 24.0 dB with a noise figure of 1.7  
dB across the band.This MMIC uses Mimix  
Broadband’s 0.1 µm GaAs PHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The chip has surface passivation to protect  
and provide a rugged part with backside via holes  
and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Input Power (Pin)  
+5.5 VDC  
130 mA  
-5.0/-1.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
Min.  
24.0  
8.0  
10.0  
Typ.  
-
12.0  
15.0  
24.0  
Max.  
32.0  
-
-
Min.  
32.0  
5.0  
10.0  
Typ.  
-
12.0  
14.0  
21.0  
Max.  
40.0  
-
-
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
2
2
20.0  
-
15.0  
-
dB  
dB  
-
-
+/-1.5  
-
-
-
-
-
+/-3.5  
-
-
-
Gain Flatness ( S21)  
Reverse Isolation (S12)  
dB  
-
1.7  
2.5  
-
1.8  
2.5  
Noise Figure (NF)  
dBm  
dBm  
VDC  
mA  
+9.0  
+11.0  
-
+5.0  
65  
-
-
-
-
+9.0  
+11.0  
-
+5.0  
65  
-
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (Vd)  
-
-
-
-
-
-
-
+5.5  
-
Supply Current (Id)  
(2) See plots for additional information.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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