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XL1002-BD-000V

更新时间： 2024-01-11 12:10:31
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 584K
描述
20.0-36.0 GHz GaAs MMIC Low Noise Amplifier

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XL1002-BD-000V 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.14
Is Samacsys：N构造：COMPONENT
增益：18 dB最大输入功率 (CW)：15 dBm
JESD-609代码：e3最大工作频率：36000 MHz
最小工作频率：20000 MHz最高工作温度：85 °C
最低工作温度：-55 °C射频/微波设备类型：WIDE BAND LOW POWER
端子面层：Matte Tin (Sn)Base Number Matches：1

XL1002-BD-000V 数据手册

 浏览型号XL1002-BD-000V的Datasheet PDF文件第2页浏览型号XL1002-BD-000V的Datasheet PDF文件第3页浏览型号XL1002-BD-000V的Datasheet PDF文件第4页浏览型号XL1002-BD-000V的Datasheet PDF文件第5页浏览型号XL1002-BD-000V的Datasheet PDF文件第6页浏览型号XL1002-BD-000V的Datasheet PDF文件第7页 
20.0-36.0 GHz GaAs MMIC  
Low Noise Amplifier  
July 2007 - Rev 17-Jul-07  
L1002-BD  
Features  
Chip Device Layout  
Balanced Design  
Excellent Input/Output Match  
Self-biased Architecture  
23.0 dB Small Signal Gain  
2.6 dB Noise Figure  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s three stage balanced 20.0-36.0  
GHz GaAs MMIC low noise amplifier has a small signal  
gain of 23.0 dB with a noise figure of 2.6 dB across the  
band.This MMIC uses Mimix Broadband’s 0.15 µm  
GaAs PHEMT device model technology, and is based  
upon electron beam lithography to ensure high  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
Input Power (Pin)  
+6.0 VDC  
120 mA  
+15.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Table  
1
1
Channel Temperature (Tch) MTTF Table  
(1) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM  
and VSAT applications.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
dBm  
VDC  
mA  
Min.  
20.0  
8.0  
15.0  
18.0  
-
40.0  
-
-
-
-
-
Typ.  
-
Max.  
36.0  
-
-
-
-
-
4.0  
-
-
+5.5  
95  
Frequency Range (f)  
Input Return Loss (S11)  
3
3
10.0  
18.0  
23.0  
+/-1.5  
45.0  
2.6  
+4.0  
+16.0  
+5.0  
85  
Output Return Loss (S22)  
3
Small Signal Gain (S21)  
Gain Flatness ( S21)  
3
Reverse Isolation (S12)  
3
Noise Figure (NF)  
2
Output Power for 1 dB Compression (P1dB)  
Output Third Order Intercept Point (OIP3)  
Drain Bias Voltage (V5)  
2
Supply Current (Id)  
(2) See plots for additional information.  
(3) Unless otherwise indicated min/max over 20.0-36.0 GHz and biased at Vd=5V, Id=85mA.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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