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XE1413I068TRLF PDF预览

XE1413I068TRLF

更新时间： 2024-11-30 20:07:27
品牌 Logo 应用领域
商升特 - SEMTECH 电信信息通信管理电信集成电路
页数 文件大小 规格书
31页 653K
描述
Telecom Circuit, 1-Func, BICMOS, PQCC40, 6 X 6 MM, 0.50 MM PITCH, LEAD FREE, TQFN-40

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XE1413I068TRLF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：QFN
包装说明：QCCN, LCC40,.24SQ,20针数：40
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：5.68JESD-30 代码：S-PQCC-N40
JESD-609代码：e3长度：6 mm
功能数量：1端子数量：40
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：QCCN
封装等效代码：LCC40,.24SQ,20封装形状：SQUARE
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
电源：1.8 V认证状态：Not Qualified
座面最大高度：0.75 mm子类别：Other Telecom ICs
标称供电电压：1.8 V表面贴装：YES
技术：BICMOS电信集成电路类型：TELECOM CIRCUIT
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：NO LEAD端子节距：0.5 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：6 mmBase Number Matches：1

XE1413I068TRLF 数据手册

 浏览型号XE1413I068TRLF的Datasheet PDF文件第2页浏览型号XE1413I068TRLF的Datasheet PDF文件第3页浏览型号XE1413I068TRLF的Datasheet PDF文件第4页浏览型号XE1413I068TRLF的Datasheet PDF文件第5页浏览型号XE1413I068TRLF的Datasheet PDF文件第6页浏览型号XE1413I068TRLF的Datasheet PDF文件第7页 
XE1413  
Bluetooth® Radio  
XE1413  
1.8V Ultra Low Power Bluetooth® RF Transceiver  
GENERAL DESCRIPTION  
FEATURES  
The XE1413 is the next generation of ultra low  
powered, fully integrated single-chip Bluetooth  
radio transceiver solutions. Fully compliant with  
Bluetooth Specification v1.2, the XE1413 offers  
performances tailored for extremely low power  
operation in handsets, headsets, and other power-  
sensitive applications.  
•
Fully integrated single-chip transceiver with on-chip  
VCO, synthesizer, PA, LNA, image-reject down-  
converter, IF filters, RSSI, and demodulator for the  
ISM 2.4 GHz band  
•
•
•
•
•
•
•
•
•
•
Class 2 and 3 Bluetooth v1.2 compliant  
Typical receive sensitivity of –85 dBm at antenna  
Low voltage supply (1.8 V)  
Transmitter output power is +2 dBm, while receiver  
sensitivity is –85 dBm. The frequency range allows  
operation in all 2.4 GHz Industrial, Scientific,  
Medical (ISM) band regulatory jurisdictions.  
Two internal voltage regulators (1.8 V and 1.5 V)  
Peak transmit current = 19 mA at maximum power  
Peak receive current consumption = 24 mA  
Peak transmit current = 11 mA at –10 dBm  
Low power timing clock mode (15 µA)  
Fabricated in a Silicon-Germanium (SiGe) Bi-polar  
Complementary Metal Oxide Semiconductor  
(BiCMOS) process, the XE1413 is a state-of-the-  
art mixed signal device mounted in a tiny, low  
profile 6 x 6 x 0.75 mm, 40-pin TQFN green  
package.  
Power-down current consumption <5 µA  
Temperature range of –40 to +85 °C is compliant with  
the Bluetooth specification  
APPLICATIONS  
•
•
•
Digital crystal frequency error compensation up to ±36  
ppm  
•
•
•
•
•
ISM 2.4 GHz frequency band  
Personal wireless connectivity  
Cellular phones, handsets, headsets, earpieces  
PDAs, palm-top computers  
Programmable transmit power control over 26 dB  
range with 2 dB steps  
High efficiency direct modulation transmitter using ∆Σ  
fractional-N synthesizer  
PC and laptop computers  
•
•
Low phase noise and closed loop PLL transmitter  
Integrated PLL-based FSK digital demodulator.  
No external component required  
ORDERING INFORMATION  
Extended Part Number Description  
•
•
High reliability, high yield SiGe BiCMOS  
process with low multiplicative 1/f noise  
XE1413I068TR LF  
2.4 GHz Bluetooth  
Transceiver  
TQFN 40-pin, 6 x 6 package, 0.5 mm pitch,  
lead-free  
Rev 3 February 2006  
www.semtech.com  
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