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XE1413I068TRLF PDF预览

XE1413I068TRLF

更新时间: 2024-02-22 17:04:59
品牌 Logo 应用领域
商升特 - SEMTECH 电信信息通信管理电信集成电路
页数 文件大小 规格书
31页 653K
描述
Telecom Circuit, 1-Func, BICMOS, PQCC40, 6 X 6 MM, 0.50 MM PITCH, LEAD FREE, TQFN-40

XE1413I068TRLF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:QFN
包装说明:QCCN, LCC40,.24SQ,20针数:40
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.68JESD-30 代码:S-PQCC-N40
JESD-609代码:e3长度:6 mm
功能数量:1端子数量:40
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:QCCN
封装等效代码:LCC40,.24SQ,20封装形状:SQUARE
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
电源:1.8 V认证状态:Not Qualified
座面最大高度:0.75 mm子类别:Other Telecom ICs
标称供电电压:1.8 V表面贴装:YES
技术:BICMOS电信集成电路类型:TELECOM CIRCUIT
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

XE1413I068TRLF 数据手册

 浏览型号XE1413I068TRLF的Datasheet PDF文件第2页浏览型号XE1413I068TRLF的Datasheet PDF文件第3页浏览型号XE1413I068TRLF的Datasheet PDF文件第4页浏览型号XE1413I068TRLF的Datasheet PDF文件第5页浏览型号XE1413I068TRLF的Datasheet PDF文件第6页浏览型号XE1413I068TRLF的Datasheet PDF文件第7页 
XE1413  
Bluetooth® Radio  
XE1413  
1.8V Ultra Low Power Bluetooth® RF Transceiver  
GENERAL DESCRIPTION  
FEATURES  
The XE1413 is the next generation of ultra low  
powered, fully integrated single-chip Bluetooth  
radio transceiver solutions. Fully compliant with  
Bluetooth Specification v1.2, the XE1413 offers  
performances tailored for extremely low power  
operation in handsets, headsets, and other power-  
sensitive applications.  
Fully integrated single-chip transceiver with on-chip  
VCO, synthesizer, PA, LNA, image-reject down-  
converter, IF filters, RSSI, and demodulator for the  
ISM 2.4 GHz band  
Class 2 and 3 Bluetooth v1.2 compliant  
Typical receive sensitivity of –85 dBm at antenna  
Low voltage supply (1.8 V)  
Transmitter output power is +2 dBm, while receiver  
sensitivity is –85 dBm. The frequency range allows  
operation in all 2.4 GHz Industrial, Scientific,  
Medical (ISM) band regulatory jurisdictions.  
Two internal voltage regulators (1.8 V and 1.5 V)  
Peak transmit current = 19 mA at maximum power  
Peak receive current consumption = 24 mA  
Peak transmit current = 11 mA at –10 dBm  
Low power timing clock mode (15 µA)  
Fabricated in a Silicon-Germanium (SiGe) Bi-polar  
Complementary Metal Oxide Semiconductor  
(BiCMOS) process, the XE1413 is a state-of-the-  
art mixed signal device mounted in a tiny, low  
profile 6 x 6 x 0.75 mm, 40-pin TQFN green  
package.  
Power-down current consumption <5 µA  
Temperature range of –40 to +85 °C is compliant with  
the Bluetooth specification  
APPLICATIONS  
Digital crystal frequency error compensation up to ±36  
ppm  
ISM 2.4 GHz frequency band  
Personal wireless connectivity  
Cellular phones, handsets, headsets, earpieces  
PDAs, palm-top computers  
Programmable transmit power control over 26 dB  
range with 2 dB steps  
High efficiency direct modulation transmitter using ∆Σ  
fractional-N synthesizer  
PC and laptop computers  
Low phase noise and closed loop PLL transmitter  
Integrated PLL-based FSK digital demodulator.  
No external component required  
ORDERING INFORMATION  
Extended Part Number Description  
High reliability, high yield SiGe BiCMOS  
process with low multiplicative 1/f noise  
XE1413I068TR LF  
2.4 GHz Bluetooth  
Transceiver  
TQFN 40-pin, 6 x 6 package, 0.5 mm pitch,  
lead-free  
Rev 3 February 2006  
www.semtech.com  
1

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