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XD1008-QH-0G00

更新时间： 2024-09-24 19:31:11
品牌 Logo 应用领域
MIMIX 射频微波
页数 文件大小 规格书
9页 1140K
描述
Wide Band Medium Power Amplifier, 30000MHz Min, 32000MHz Max, 4 X 4 MM, ROHS COMPLIANT, QFN-24

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XD1008-QH-0G00 技术参数

是否Rohs认证： 符合生命周期：Transferred
Reach Compliance Code：unknown风险等级：5.11
构造：COMPONENT增益：17 dB
最大输入功率 (CW)：17 dBmJESD-609代码：e3
最大工作频率：32000 MHz最小工作频率：30000 MHz
最高工作温度：85 °C最低工作温度：-55 °C
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XD1008-QH-0G00 数据手册

 浏览型号XD1008-QH-0G00的Datasheet PDF文件第2页浏览型号XD1008-QH-0G00的Datasheet PDF文件第3页浏览型号XD1008-QH-0G00的Datasheet PDF文件第4页浏览型号XD1008-QH-0G00的Datasheet PDF文件第5页浏览型号XD1008-QH-0G00的Datasheet PDF文件第6页浏览型号XD1008-QH-0G00的Datasheet PDF文件第7页 
30.0 kHz-32.0 GHz GaAs MMIC  
Distributed QFN Packaged Amplifier  
December 2009 - Rev 08-Dec-09  
D1008-QH  
Features  
17 dB Small Signal Gain  
24 dBm Saturated Power  
3.0 dB Noise Figure  
Unconditional Stability over Temperature Range  
4x4mm Fully Molded Standard QFN Package  
100% RF & DC Testing  
General Description  
Mimix Broadband’s 30 kHz – 32 GHz MMIC  
distributed amplifier has a gain of 17 dB and  
Absolute Maximum Ratings  
provides 24 dBm saturated power with 3.0 dB  
Noise Figure.The device comes in an RoHS  
compliant 4x4mm QFN surface mount package  
offering excellent RF and thermal properties.The  
device’s broad bandwidth operation makes it very  
versatile for microwave and millimeter applications  
such as instrumentation, EW and commercial  
communication systems.  
Supply Voltage (Vd1,2,3)  
Gate Bias Voltage (Vg1,2,3)  
Input Power (Pin)  
+10.0V  
-9.5V < Vg < 0V  
+17 dBm  
See MTTF Graph1  
Abs. Max. Junction/Channel Temp.  
Max.Operating Junction/ChannelTemp. 150 ºC  
ContinuousPowerDissipation(Pdiss)at85ºC 1.6W  
Thermal Resistance  
40 ºC/W  
Operating Temperature (Ta)  
Storage Temperature (Tstg)  
Mounting Temperature  
-55ºCto+85ºC  
-65ºCto165ºC  
Seesolderreflowprofile  
Class A  
ESD Min - Machine Model (MM)  
ESD Min - Human Body Model (HBM) Class 1A  
MSL Level MSL3  
(1) Channel temperature directly affects a device’s MTTF. Channel  
temperature should be kept as low as possible to maximize lifetime.  
Bias Settings  
Parameter  
Units  
mA  
V
V
Ohm  
Min.  
150  
4.0  
-5.0  
GND  
Typ.  
Max.  
300  
7.0  
0.0  
Open  
Drain Current (Id)  
-
-
-
-
Drain Voltage (Vd)  
Gate Bias (Vg1)1  
Gate Bias (Vg3)2  
Page 1 of 9  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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