Datasheet > XCTN26358301B

XCTN26358301B

更新时间： 2024-11-13 06:36:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	117K
描述
RES NET,THIN FILM,58.3K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0303 CASE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

XCTN26358301B 数据手册

CTN

Vishay Electro-Films

Nichrome Thin Film, Center Tapped Resistors

FEATURES

• Wire bondable

Product may not

be to scale

• Center tap feature

• Chip size: 0.030 inches square

• Resistance range total: 10 Ω to 1 MΩ

• Ratio tolerances to: 0.1 %

• Resistor material: Nichrome

• Oxidized silicon substrate for good power dissipation

The CTN series is a center tapped nichrome resistor chip

providing excellent stability at 250 mW power levels. The

CTN offers the designer flexibility in use as either a single

value resistor or as two resistors with a center tap feature.

The CTNs six bonding pads allows the user increased layout

flexibility.

The CTNs are manufactured using Vishay Electro-Films

(EFI) sophisticated thin film equipment and manufacturing

technology. The CTNs are 100 % electrically tested and

visually inspected to MIL-STD-883.

APPLICATIONS

The CTN center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, high power and

tracking between two resistors is critical.

Recommended for Hermetic environment where die is not exposed to moisture.

For low values, the resistance of the six bonding-pad configurations can vary, depending on the method of measurement used.

Vishay EFI measures low-value resistors by the four wire Kelvin technique.

TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES

Tightest Standard Tolerance Available

PROCESS CODE

0.1 %

0.2 %

CLASS H*

CLASS K*

263

10 ppmꢁ/C

ꢀ2 ppmꢁ/C

20 ppmꢁ/C

203

202

262

200

260

100 ppmꢁ/C

201

261

*MIL-PRF-38534 inspection criteria

1 kΩ

10 Ω

100 Ω

ꢀ00 Ω

1 MΩ

STANDARD ELECTRICAL SPECIFICATIONS

PARAMETER

TCR Tracking Between Halves (R_AꢁR_B)

Center Tap Ratio, R_AꢁR_BTolerance

Noise, MIL-STD-ꢀ0ꢀ, Method 308, 100 Ω - ꢀ20 kΩ

Stability, 1000 h, + 1ꢀ2 /C, 1ꢀ2 mW

Operating Temperature Range

2 ppm/°C *

1 % standard

- 35 dB typ.

0.1 % ΔR/R

- 55 °C to + 125 °C

Dielectric Voltage Breakdown

200 V

Insulation Resistance

10¹²min.

Operating Voltage

100 V max.

250 mW

DC Power Rating at + 70 /C (Derated to Zero at + 172 /C)

* 20 ppm/°C for R < 20

www.vishay.com

For technical questions, contact: efi@vishay.com

Document Number: 61024

Revision: 12-Mar-08

12 3

中文翻译

下载PDF

与XCTN26358301B相关器件

型号	品牌	获取价格	描述	数据表
XCTN26358302D	VISHAY	获取价格	RES NET,THIN FILM,583K OHMS,100WV,.5% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26359001C	VISHAY	获取价格	RES NET,THIN FILM,59K OHMS,100WV,.2% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26359001D	VISHAY	获取价格	RES NET,THIN FILM,59K OHMS,100WV,.5% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26359002F	VISHAY	获取价格	RES NET,THIN FILM,590K OHMS,100WV,1% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26359701C	VISHAY	获取价格	RES NET,THIN FILM,59.7K OHMS,100WV,.2% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26361201B	VISHAY	获取价格	RES NET,THIN FILM,61.2K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26362601C	VISHAY	获取价格	RES NET,THIN FILM,62.6K OHMS,100WV,.2% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26363401D	VISHAY	获取价格	RES NET,THIN FILM,63.4K OHMS,100WV,.5% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26364202B	VISHAY	获取价格	RES NET,THIN FILM,642K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0303 CASE
XCTN26364202C	VISHAY	获取价格	RES NET,THIN FILM,642K OHMS,100WV,.2% +/-TOL,-10,10PPM TC,0303 CASE

与XCTN26358301B相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

XCTN26358301B

XCTN26358301B 数据手册

与XCTN26358301B相关器件

与XCTN26358301B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

XCTN26358301B

XCTN26358301B 数据手册

与XCTN26358301B相关器件

与XCTN26358301B相关文章

您还可以找

您在本页遇到什么问题？