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XB1009-QT-0G00

更新时间： 2024-11-18 03:14:47
品牌 Logo 应用领域
MIMIX 射频和微波射频放大器微波放大器缓冲放大器
页数 文件大小 规格书
8页 267K
描述
12.0-27.0 GHz GaAs MMIC Buffer Amplifier, QFN

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XB1009-QT-0G00 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
构造：COMPONENT增益：16 dB
最大输入功率 (CW)：12 dBmJESD-609代码：e3
最大工作频率：27000 MHz最小工作频率：12000 MHz
射频/微波设备类型：WIDE BAND MEDIUM POWER端子面层：Matte Tin (Sn)
Base Number Matches：1

XB1009-QT-0G00 数据手册

 浏览型号XB1009-QT-0G00的Datasheet PDF文件第2页浏览型号XB1009-QT-0G00的Datasheet PDF文件第3页浏览型号XB1009-QT-0G00的Datasheet PDF文件第4页浏览型号XB1009-QT-0G00的Datasheet PDF文件第5页浏览型号XB1009-QT-0G00的Datasheet PDF文件第6页浏览型号XB1009-QT-0G00的Datasheet PDF文件第7页 
12.0-27.0 GHz GaAs MMIC  
Buffer Amplifier, QFN  
February 2007 - Rev 08-Feb-07  
B1009-QT  
Features  
Excellent Transmit LO/Output Buffer Stage  
On-Chip ESD Protection  
16.0 dB Small Signal Gain  
+22.0 dBm P1dB Compression Point  
RoHS Compliant SMD, 3x3 mm QFN Package  
100% RF, DC, and Output Power Testing  
General Description  
Mimix Broadband’s three stage 12.0-27.0 GHz GaAs  
MMIC buffer amplifier has a small signal gain of 16.0  
dB with a +22.0 dBm P1dB output compression point  
across much of the band.This MMIC uses Mimix  
Broadband’s 0.15 µm GaAs PHEMT device model  
technology, and is based upon electron beam  
lithography to ensure high repeatability and  
uniformity.The device comes in a RoHS compliant  
3x3mm QFN Surface Mount Package offering  
excellent RF and thermal properties.This device is well  
suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id1,2,3)  
Gate Bias Voltage (Vg)  
Input Power (Pin)  
+6.0 VDC  
90, 260 mA  
+0.3 VDC  
+12.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
Operating Temperature (Ta) -55 to MTTF Graph1  
Channel Temperature (Tch) MTTF Graph1  
(1) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Frequency Range (f)  
Input Return Loss (S11)  
Output Return Loss (S22)  
Small Signal Gain (S21)  
Gain Flatness ( S21)  
Units  
GHz  
dB  
dB  
dB  
dB  
dB  
dB  
dBm  
VDC  
VDC  
mA  
mA  
Min.  
12.0  
-
-
-
-
-
-
Typ.  
-
Max.  
27.0  
-
-
-
-
-
-
-
+5.5  
0.0  
75  
220  
10.0  
10.0  
16.0  
+/-3.0  
45.0  
5.0  
+22.0  
+5.0  
-0.6  
60  
Reverse Isolation (S12)  
Noise Figure (NF)  
2
Output Power for 1dB Compression (P1dB)  
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2)  
Supply Current (Id1) (Vd=5.0V,Vg=-0.6V Typical)  
Supply Current (Id2) (Vd=5.0V,Vg=-0.6V Typical)  
-
-
-1.0  
-
-
180  
(2) Measured using constant current.  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
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