XB1002

更新时间： 2024-01-10 11:23:16

品牌	Logo	应用领域
MIMIX		射频和微波射频放大器微波放大器缓冲放大器
页数	文件大小	规格书
6页	412K
描述
36.0-43.0 GHz GaAs MMIC Buffer Amplifier

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技术参数
数据手册

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XB1002 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.17	Is Samacsys：	N
构造：	COMPONENT	增益：	24 dB
最大输入功率 (CW)：	-3 dBm	JESD-609代码：	e3
最大工作频率：	43000 MHz	最小工作频率：	36000 MHz
射频/微波设备类型：	WIDE BAND LOW POWER	端子面层：	Matte Tin (Sn)
Base Number Matches：	1

XB1002 数据手册

36.0-43.0 GHz GaAs MMIC

Buffer Amplifier

April 2005 - Rev 01-Apr-05

B1002

Features

Chip Device Layout

High Dynamic Range/Postivie Gain Slope

Excellent LO Driver/Buffer Amplifier

Low Noise or Power Bias Configurations

24.0 dB Small Signal Gain

4.0 dB Noise Figure at Low Noise Bias

+14 dBm P1dB Compression Point at Low Noise Bias

100% On-Wafer RF, DC and Noise Figure Testing

100% Visual Inspection to MIL-STD-883

Method 2010

General Description

Absolute Maximum Ratings

Mimix Broadband’s four stage 36.0-43.0 GHz GaAs

MMIC buffer amplifier has a small signal gain of 24.0

dB with a noise figure of 4.0 dB across the band. Gain

increases with frequency to compensate for other

component roll-off factors common in 38.0-40.0 GHz

systems.This MMIC uses Mimix Broadband’s 0.15 µm

GaAs PHEMT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity.The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process.This device is well suited for

Supply Voltage (Vd)

Supply Current (Id)

Gate Bias Voltage (Vg)

Input Power (Pin)

Storage Temperature (Tstg) -65 to +165 ^OC

Operating Temperature (Ta) -55 to MTTF Table

+6.0 VDC

250 mA

+0.3 VDC

-8.0, -3.0 dBm

Channel Temperature (Tch) MTTF Table

(3) Channel temperature affects a device's MTBF. It is

recommended to keep channel temperature as low as

possible for maximum life.

Millimeter-wave Point-to-Point Radio, LMDS, SATCOM

and VSAT applications.

Electrical Characteristics (AmbientTemperatureT = 25 ^oC)

Parameter

Units

GHz

Min.

36.0

Typ.

8.0

Max.

43.0

Frequency Range (f)

Input Return Loss (S11)

Output Return Loss (S22)

8.0

Small Signal Gain (S21)

Gain Flatness (∆S21)

Reverse Isolation (S12)

Noise Figure (NF)

24.0

+/-2.5

45.0

4.0

Output Power for 1 dB Compression (P1dB)^1,2

Output Third Order Intercept Point (OIP3)^1,2

Drain Bias Voltage (Vd1,2)

Gate Bias Voltage (Vg1,2)

Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)

dBm

VDC

+14.0

+24.0

+3.0

-0.5

110

-1.0

+5.5

0.0

220

(1) Optional power bias Vd1,2=5.5V, Id=220mA will typically yield 3-4 dB improved P1dB and OIP3.

(2) Measured using constant current.

Page 1 of 6

Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

12 3 4 5 6

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