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XA1000-BD-EV1 PDF预览

XA1000-BD-EV1

更新时间: 2024-09-18 06:01:31
品牌 Logo 应用领域
MIMIX 射频和微波射频衰减器微波衰减器
页数 文件大小 规格书
6页 364K
描述
DC-18.0 GHz GaAs MMIC 5-Bit Digital Attenuator

XA1000-BD-EV1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.83Is Samacsys:N
标称衰减:27.9 dB构造:COMPONENT
最大输入功率 (CW):44.77 dBmJESD-609代码:e3
最大工作频率:18000 MHz最小工作频率:
最低工作温度:-55 °C射频/微波设备类型:VARIABLE ATTENUATOR
端子面层:Matte Tin (Sn)Base Number Matches:1

XA1000-BD-EV1 数据手册

 浏览型号XA1000-BD-EV1的Datasheet PDF文件第2页浏览型号XA1000-BD-EV1的Datasheet PDF文件第3页浏览型号XA1000-BD-EV1的Datasheet PDF文件第4页浏览型号XA1000-BD-EV1的Datasheet PDF文件第5页浏览型号XA1000-BD-EV1的Datasheet PDF文件第6页 
DC-18.0 GHz GaAs MMIC  
5-Bit Digital Attenuator  
August 2007 - Rev 21-Aug-07  
A1000-BD  
Features  
Chip Device Layout  
5-Bit Attenuator  
27.9 dB Attenuation Range  
24 dBm P1dB Input Compression  
0.9 dB LSB  
Digital Control (0.0 to 3.3 V)  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Absolute Maximum Ratings  
Mimix Broadband’s DC- 18.0 GHz attenuator has an  
LSB value of 0.9 dB and is controlled with 5 digital  
binary inputs, which meet the LVCMOS specifications.  
The 2.4 x 1.6 mm2 device uses a single supply voltage  
of -7.5 V. This MMIC uses Mimix Broadband’s 0.5 µm  
GaAs PHEMT device model technology, and is based  
upon optical gate lithography to ensure high  
repeatability and uniformity.The chip has surface  
passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for radar and  
applications.  
Supply Voltage (Vss)  
Supply Current (Iss)  
Input Power (Pin)  
-10.0 VDC  
10.0 mA  
30.0 dBm  
Storage Temperature (Tstg) -65 to +165 OC  
3
Operating Temperature (Ta) -55 to MTTF Table  
3
Channel Temperature (Tch) MTTF Table  
(3) Channel temperature affects a device's MTBF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25 oC)  
Parameter  
Units  
GHz  
dB  
dB  
dB  
dB  
dBm  
dB  
Min.  
DC  
-
-
-
-
24.0  
-
-
-
-
-
-
-
-
Typ.  
-
Max.  
18.0  
-
-
-
-
-
-
Frequency Range (f)  
Attenuation Range  
27.9  
5.5  
17.0  
15.0  
25.0  
<0.5  
<1  
<10  
<20  
15  
Insertion Loss @ 10 GHz (S21), Reference Level  
Input Return Loss (S11), All States  
Output Return Loss (S22), All States  
Input Power at 1 dB Compression (P1dB)  
RMS Attenuation Error  
Max Attenuation Error  
RMS Phase Error  
dB  
-
-
-
deg  
deg  
deg  
nS  
VDC  
mA  
V
Max Phase Error  
Phase Variation @ 10 GHz  
Switching Speed  
-
45.0  
-
-
5
-
Vss  
Iss  
-7.5  
9
Vcontrol High  
Vcontrol Low  
3.3  
0
V
0.8  
Page 1 of 6  
Mimix Asia, Inc. (a subsidiary of Mimix Broadband, Inc.)  
3F, 3-2 Industry East IX Road, Science-Based Industrial Park • Hsinchu,Taiwan, R.O.C  
Tel +886-3-567-9680 • Fax +886-3-567-9433 • mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  

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