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X84256S8I PDF预览

X84256S8I

更新时间: 2024-09-14 22:35:07
品牌 Logo 应用领域
XICOR 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
15页 72K
描述
UPort Saver EEPROM

X84256S8I 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, SOIC-8Reach Compliance Code:unknown
风险等级:5.92其他特性:100000 ENDURANCE CYCLES; 10 YEARS DATA RETENTION; 64-BYTE PAGE
数据保留时间-最小值:100耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
长度:4.9 mm内存密度:262144 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:32768 words字数代码:32000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:3-WIRE最大待机电流:0.000001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

X84256S8I 数据手册

 浏览型号X84256S8I的Datasheet PDF文件第2页浏览型号X84256S8I的Datasheet PDF文件第3页浏览型号X84256S8I的Datasheet PDF文件第4页浏览型号X84256S8I的Datasheet PDF文件第5页浏览型号X84256S8I的Datasheet PDF文件第6页浏览型号X84256S8I的Datasheet PDF文件第7页 
Preliminary  
256K  
MPS EEPROM  
X84256  
µPort Saver EEPROM  
DESCRIPTION  
FEATURES  
• Up to 10MHz data transfer rate  
• 25ns Read Access Time  
• Direct Interface to Microprocessors and  
Microcontrollers  
—Eliminates I/O port requirements  
—No interface glue logic required  
Eliminates need for parallel to serial converters  
• Low Power CMOS  
—2.5V–5.5V and 5V ±10% Versions  
—Standby Current Less than 1µA  
—Active Current Less than 3mA  
• Byte or Page Write Capable  
—64-Byte Page Write Mode  
• Typical Nonvolatile Write Cycle Time: 2ms  
• High Reliability  
—1,000,000 Endurance Cycles  
—Guaranteed Data Retention: 100Years  
• Small Packages Options  
—8, 16-Lead SOIC Packages  
—14-Lead TSSOP Packages  
—8-Lead XBGA Packages  
The µPort Saver memories need no serial ports or spe-  
cial hardware and connect to the processor memory bus.  
Replacing bytewide data memory, the µPort Saver uses  
bytewide memory control functions, takes a fraction of  
the board space and consumes much less power.  
Replacing serial memories, the µPort Saver provides all  
the serial benefits, such as low cost, low power, low volt-  
age, and small package size while releasing I/Os for  
more important uses.  
The µPort Saver memory outputs data within 25ns of an  
active read signal. This is less than the read access time  
of most hosts and provides “no-wait-state” operation.  
This prevents bottlenecks on the bus. With rates to 10  
MHz, the µPort Saver supplies data faster than required  
by most host read cycle specifications. This eliminates  
the need for software NOPs.  
The µPort Saver memories communicate over one line  
of the data bus using a sequence of standard bus read  
and write operations. This “bit serial” interface allows the  
µPort Saver to work well in 8-bit, 16 bit, 32-bit, and 64-bit  
systems.  
A Write Protect (WP) pin prevents inadvertent writes to  
the memory.  
Xicor EEPROMs are designed and tested for applica-  
tions requiring extended endurance. Inherent data reten-  
tion is greater than 100 years.  
BLOCK DIAGRAM  
System Connection  
Internal Block Diagram  
MPS  
WP  
H.V. GENERATION  
TIMING & CONTROL  
A15  
µP  
µC  
A0  
D7  
DSP  
ASIC  
RISC  
CE  
I/O  
OE  
EEPROM  
ARRAY  
COMMAND  
DECODE  
AND  
CONTROL  
LOGIC  
X
DEC  
D0  
OE  
WE  
32K x 8  
P0/CS  
P1/CLK  
P2/DI  
Ports  
Saved  
WE  
P3/DO  
Y DECODE  
DATA REGISTER  
Xicor, Inc. 1998 Patents Pending  
4005 1 8/24/99 WW  
Characteristics subject to change without notice  
1

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