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X28HT512D-20 PDF预览

X28HT512D-20

更新时间: 2024-11-25 22:08:55
品牌 Logo 应用领域
XICOR 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 70K
描述
High Temperature, 5 Volt, Byte Alterable E2PROM

X28HT512D-20 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:HERMETIC SEALED, CERDIP-32Reach Compliance Code:unknown
风险等级:5.5Is Samacsys:N
最长访问时间:200 ns命令用户界面:NO
数据轮询:NOJESD-30 代码:R-GDIP-T32
JESD-609代码:e0内存密度:524288 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:175 °C
最低工作温度:-40 °C组织:64KX8
输出特性:3-STATE封装主体材料:CERAMIC, GLASS-SEALED
封装代码:DIP封装等效代码:DIP32,.6
封装形状:RECTANGULAR封装形式:IN-LINE
页面大小:128 words并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:5.9 mm
最大待机电流:0.003 A子类别:EEPROMs
最大压摆率:0.05 mA最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:AUTOMOTIVE端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL切换位:NO
宽度:15.24 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

X28HT512D-20 数据手册

 浏览型号X28HT512D-20的Datasheet PDF文件第2页浏览型号X28HT512D-20的Datasheet PDF文件第3页浏览型号X28HT512D-20的Datasheet PDF文件第4页浏览型号X28HT512D-20的Datasheet PDF文件第5页浏览型号X28HT512D-20的Datasheet PDF文件第6页浏览型号X28HT512D-20的Datasheet PDF文件第7页 
512K  
X28HT512  
64K x 8 Bit  
High Temperature, 5 Volt, Byte Alterable E2PROM  
FEATURES  
DESCRIPTION  
2
175°C Full Functionality  
The X28HT512 is an 64K x 8 CMOS E PROM, fabri-  
Simple Byte and Page Write  
cated with Xicor’s proprietary, high performance, float-  
ing gate CMOS technology which provides Xicor prod-  
ucts superior high temperature performance character-  
istics. Like all Xicor programmable nonvolatile memo-  
ries the X28HT512 is a 5V only device. The X28HT512  
featurestheJEDECapprovedpinoutforbytewidememo-  
ries, compatible with industry standard EPROMS.  
—Single 5V Supply  
—Self-Timed  
—No Erase Before Write  
—No Complex Programming Algorithms  
—No Overerase Problem  
Highly Reliable Direct Write™ Cell  
—Endurance: 10,000 Write Cycles  
—Data Retention: 100 Years  
—Higher Temperature Functionality is Possible  
by Operating in the Byte Mode  
The X28HT512 supports a 128-byte page write opera-  
tion, effectively providing a 39µs/byte write cycle and  
enabling the entire memory to be written in less than 2.5  
seconds.  
PIN CONFIGURATION  
FLAT PACK  
CERDIP  
SOIC (R)  
PGA  
I/O  
15  
I/O  
17  
I/O  
19  
I/O  
21  
I/O  
22  
V
1
2
3
4
5
6
7
8
9
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
V
0
2
3
5
6
BB  
NC  
CC  
WE  
CE  
24  
A
NC  
A
13  
A
14  
I/O  
16  
V
I/O  
20  
I/O  
23  
15  
12  
1
0
1
SS  
4
7
18  
A
A
14  
A
A
OE  
26  
7
6
5
4
3
2
1
0
0
1
2
A
12  
A
A
25  
13  
2
4
3
10  
11  
11  
A
A
8
A
9
A
A
10  
A
X28HT512  
A
27  
A
28  
5
9
A
A
9
7
11  
X28HT512  
(BOTTOM VIEW)  
A
OE  
A
A
A
29  
A
13  
30  
6
7
8
A
10  
11  
12  
13  
14  
15  
16  
A
8
6
10  
A
CE  
NC  
V
NC  
32  
A
V
36  
NC  
34  
A
A
31  
A
I/O  
7
I/O  
6
I/O  
5
I/0  
4
15  
CC  
12  
14  
5
4
2
I/O  
I/O  
I/O  
V
NC  
NC  
33  
WE  
35  
NC  
BB  
3
1
I/O  
3
SS  
6614 FHD F23  
6614 FHD F02.1  
© Xicor, Inc. 1991, 1995, 1996 Patents Pending  
6614-1.5 8/5/97 T2/C0/D0 EW  
Characteristics subject to change without notice  
1

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