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X28C64K PDF预览

X28C64K

更新时间: 2024-11-04 22:52:11
品牌 Logo 应用领域
XICOR 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 112K
描述
5 Volt, Byte Alterable E2PROM

X28C64K 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CERAMIC, PGA-28Reach Compliance Code:unknown
风险等级:5.87Is Samacsys:N
最长访问时间:300 ns命令用户界面:NO
数据轮询:YESJESD-30 代码:R-CPGA-P28
JESD-609代码:e0长度:16.51 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:28字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8KX8输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:PGA
封装等效代码:PGA28,5X6封装形状:RECTANGULAR
封装形式:GRID ARRAY页面大小:64 words
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:4.62 mm
最大待机电流:0.0002 A子类别:EEPROMs
最大压摆率:0.06 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULAR处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:YES宽度:14 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

X28C64K 数据手册

 浏览型号X28C64K的Datasheet PDF文件第2页浏览型号X28C64K的Datasheet PDF文件第3页浏览型号X28C64K的Datasheet PDF文件第4页浏览型号X28C64K的Datasheet PDF文件第5页浏览型号X28C64K的Datasheet PDF文件第6页浏览型号X28C64K的Datasheet PDF文件第7页 
64K  
X28C64  
5 Volt, Byte Alterable E2PROM  
DESCRIPTION  
8K x 8 Bit  
FEATURES  
150ns Access Time  
The X28C64 is an 8K x 8 E2PROM, fabricated with  
Xicor’s proprietary, high performance, floating gate  
CMOS technology. Like all Xicor programmable non-  
volatile memories the X28C64 is a 5V only device. The  
X28C64 features the JEDEC approved pinout for byte-  
widememories,compatiblewithindustrystandardRAMs.  
Simple Byte and Page Write  
—Single 5V Supply  
—No External High Voltages or VPP Control  
Circuits  
—Self-Timed  
—No Erase Before Write  
—No Complex Programming Algorithms  
—No Overerase Problem  
The X28C64 supports a 64-byte page write operation,  
effectively providing a 78µs/byte write cycle and en-  
abling the entire memory to be typically written in 0.625  
seconds. The X28C64 also features DATA and Toggle  
Bit Polling, a system software support scheme used to  
indicate the early completion of a write cycle. In addi-  
tion, theX28C64includesauser-optionalsoftwaredata  
protection mode that further enhances Xicor’s hard-  
ware write protect capability.  
Low Power CMOS  
—60mA Active Current Max.  
—200µA Standby Current Max.  
Fast Write Cycle Times  
—64 Byte Page Write Operation  
—Byte or Page Write Cycle: 5ms Typical  
—Complete Memory Rewrite: 0.625 sec. Typical  
—Effective Byte Write Cycle Time: 78µs Typical  
Software Data Protection  
End of Write Detection  
Xicor E2PROMs are designed and tested for applica-  
tions requiring extended endurance. Inherent data re-  
tention is greater than 100 years.  
DATA Polling  
—Toggle Bit  
High Reliability  
—Endurance: 100,000 Cycles  
—Data Retention: 100 Years  
JEDEC Approved Byte-Wide Pinout  
PIN CONFIGURATION  
LCC  
PLCC  
PLASTIC DIP  
CERDIP  
FLAT PACK  
SOIC  
TSOP  
A
A
A
I/O  
I/O  
I/O  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
A
A
A
A
A
A
NC  
NC  
V
NC  
WE  
NC  
A
A
A
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
V
2
1
0
0
1
2
3
4
5
6
7
12  
CC  
4
3
2
1
32 31 30  
29  
A
2
WE  
12  
A
A
A
A
A
A
A
5
6
7
8
9
A
A
A
6
5
4
3
2
1
0
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
3
NC  
28  
27  
26  
25  
24  
23  
22  
21  
9
4
A
8
A
9
11  
5
NC  
NC  
OE  
A
V
SS  
NC  
6
A
11  
X28C64  
9
X28C64  
CC  
7
OE  
I/O  
10  
11  
12  
13  
14  
15  
16  
3
4
5
6
7
X28C64  
10  
11  
12  
13  
I/O  
I/O  
I/O  
I/O  
10  
8
A
10  
CE  
I/O  
9
CE  
8
9
11  
NC  
I/O  
7
10  
11  
12  
13  
14  
I/O  
7
I/O  
6
I/O  
5
I/0  
4
I/O  
CE  
0
6
I/O  
0
1
2
14 15 16 17 18 19 20  
A
OE  
10  
I/O  
I/O  
V
I/O  
3
SS  
3853 ILL F23.1  
3853 FHD F03  
3853 FHD F02  
© Xicor, Inc. 1991, 1995 Patents Pending  
3853-2.7 4/2/96 T0/C3/D2 NS  
Characteristics subject to change without notice  
1

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