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X25650V20I-2.5 PDF预览

X25650V20I-2.5

更新时间: 2024-01-10 04:47:18
品牌 Logo 应用领域
XICOR 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
14页 79K
描述
5MHz SPI Serial E 2 PROM with Block Lock TM Protection

X25650V20I-2.5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:PLASTIC, TSSOP-20Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
其他特性:100000 ENDURANCE CYCLES; 100 YEARS DATA RETENTION最大时钟频率 (fCLK):5 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G20JESD-609代码:e0
长度:6.5 mm内存密度:65536 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:20
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP20,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:4.4 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

X25650V20I-2.5 数据手册

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64K  
8K x 8 Bit  
X25650  
2
TM  
5MHz SPI Serial E PROM with Block Lock Protection  
FEATURES  
DESCRIPTION  
5MHz Clock Rate  
Low Power CMOS  
The X25650 is a CMOS 65,536-bit serial E2PROM,  
internally organized as 8K x 8. The X25650 features a  
Serial Peripheral Interface (SPI) and software protocol  
allowing operation on a simple three-wire bus. The bus  
signals are a clock input (SCK) plus separate data in  
(SI) and data out (SO) lines. Access to the device is  
controlled through a chip select (CS) input, allowing  
any number of devices to share the same bus.  
<1µA Standby Current  
<5mA Active Current  
2.5V To 5.5V Power Supply  
SPI Modes (0,0 & 1,1)  
8K X 8 Bits  
32 Byte Page Mode  
Block Lock™ Protection  
The X25650 also features two additional inputs that  
provide the end user with added flexibility. By  
asserting the HOLD input, the X25650 will ignore tran-  
sitions on its inputs, thus allowing the host to service  
higher priority interrupts. The WP input can be used as  
a hardwire input to the X25650 disabling all write  
attempts to the status register, thus providing a mech-  
anism for limiting end user capability of altering 0, 1/4,  
1/2 or all of the memory.  
Protect 1/4, 1/2 or all of E2PROM Array  
Programmable Hardware Write Protection  
In-Circuit Programmable ROM Mode  
Built-in Inadvertent Write Protection  
Power-Up/Down protection circuitry  
Write Enable Latch  
Write Protect Pin  
Self-Timed Write Cycle  
5ms Write Cycle Time (Typical)  
High Reliability  
The X25650 utilizes Xicor’s proprietary Direct WriteTM  
cell, providing a minimum endurance of 100,000  
cycles and a minimum data retention of 100 years.  
Endurance: 100,000 cycles  
Data Retention: 100 Years  
ESD protection: 2000V on all pins  
Packages  
8-Lead SOIC  
20-Lead TSSOP  
FUNCTIONAL DIAGRAM  
WRITE  
STATUS  
PROTECT  
REGISTER  
LOGIC  
X DECODE  
LOGIC  
8K BYTE  
ARRAY  
64  
64  
64 X 256  
64 X 256  
SO  
COMMAND  
DECODE  
SI  
SCK  
CS  
AND  
CONTROL  
LOGIC  
HOLD  
128  
128 X 256  
WRITE  
CONTROL  
AND  
TIMING  
LOGIC  
WP  
32  
8
Y DECODE  
DATA REGISTER  
7037 FRM F01  
Direct Write and Block Lock Protection is a trademark of Xicor, Inc.  
Xicor, Inc. 1994, 1995, 1996 Patents Pending  
7037–1.5 6/19/97 T1/C0/D0 SH  
1
Characteristics subject to change without notice  

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