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X25650V20 PDF预览

X25650V20

更新时间: 2024-01-09 01:11:47
品牌 Logo 应用领域
XICOR 存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
14页 79K
描述
5MHz SPI Serial E 2 PROM with Block Lock TM Protection

X25650V20 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:TSSOP,
针数:20Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.82最大时钟频率 (fCLK):5 MHz
JESD-30 代码:R-PDSO-G20长度:6.5 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:20
字数:8192 words字数代码:8000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.2 mm
串行总线类型:SPI最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:4.4 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

X25650V20 数据手册

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64K  
8K x 8 Bit  
X25650  
2
TM  
5MHz SPI Serial E PROM with Block Lock Protection  
FEATURES  
DESCRIPTION  
5MHz Clock Rate  
Low Power CMOS  
The X25650 is a CMOS 65,536-bit serial E2PROM,  
internally organized as 8K x 8. The X25650 features a  
Serial Peripheral Interface (SPI) and software protocol  
allowing operation on a simple three-wire bus. The bus  
signals are a clock input (SCK) plus separate data in  
(SI) and data out (SO) lines. Access to the device is  
controlled through a chip select (CS) input, allowing  
any number of devices to share the same bus.  
<1µA Standby Current  
<5mA Active Current  
2.5V To 5.5V Power Supply  
SPI Modes (0,0 & 1,1)  
8K X 8 Bits  
32 Byte Page Mode  
Block Lock™ Protection  
The X25650 also features two additional inputs that  
provide the end user with added flexibility. By  
asserting the HOLD input, the X25650 will ignore tran-  
sitions on its inputs, thus allowing the host to service  
higher priority interrupts. The WP input can be used as  
a hardwire input to the X25650 disabling all write  
attempts to the status register, thus providing a mech-  
anism for limiting end user capability of altering 0, 1/4,  
1/2 or all of the memory.  
Protect 1/4, 1/2 or all of E2PROM Array  
Programmable Hardware Write Protection  
In-Circuit Programmable ROM Mode  
Built-in Inadvertent Write Protection  
Power-Up/Down protection circuitry  
Write Enable Latch  
Write Protect Pin  
Self-Timed Write Cycle  
5ms Write Cycle Time (Typical)  
High Reliability  
The X25650 utilizes Xicor’s proprietary Direct WriteTM  
cell, providing a minimum endurance of 100,000  
cycles and a minimum data retention of 100 years.  
Endurance: 100,000 cycles  
Data Retention: 100 Years  
ESD protection: 2000V on all pins  
Packages  
8-Lead SOIC  
20-Lead TSSOP  
FUNCTIONAL DIAGRAM  
WRITE  
STATUS  
PROTECT  
REGISTER  
LOGIC  
X DECODE  
LOGIC  
8K BYTE  
ARRAY  
64  
64  
64 X 256  
64 X 256  
SO  
COMMAND  
DECODE  
SI  
SCK  
CS  
AND  
CONTROL  
LOGIC  
HOLD  
128  
128 X 256  
WRITE  
CONTROL  
AND  
TIMING  
LOGIC  
WP  
32  
8
Y DECODE  
DATA REGISTER  
7037 FRM F01  
Direct Write and Block Lock Protection is a trademark of Xicor, Inc.  
Xicor, Inc. 1994, 1995, 1996 Patents Pending  
7037–1.5 6/19/97 T1/C0/D0 SH  
1
Characteristics subject to change without notice  

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