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X24513B-2.5 PDF预览

X24513B-2.5

更新时间: 2024-10-03 19:45:03
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
18页 166K
描述
EEPROM, 64KX8, Serial, CMOS, PBGA8, XBGA-8

X24513B-2.5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:XBGA-8Reach Compliance Code:unknown
风险等级:5.92最大时钟频率 (fCLK):1 MHz
命令用户界面:YES数据保留时间-最小值:100
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PBGA-B8
JESD-609代码:e0长度:3.4798 mm
内存密度:524288 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:65536 words
字数代码:64000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA8,2X4(UNSPEC)
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
串行总线类型:I2C最大待机电流:0.001 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:2 mm最长写入周期时间 (tWC):10 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

X24513B-2.5 数据手册

 浏览型号X24513B-2.5的Datasheet PDF文件第2页浏览型号X24513B-2.5的Datasheet PDF文件第3页浏览型号X24513B-2.5的Datasheet PDF文件第4页浏览型号X24513B-2.5的Datasheet PDF文件第5页浏览型号X24513B-2.5的Datasheet PDF文件第6页浏览型号X24513B-2.5的Datasheet PDF文件第7页 
Preliminary Information  
512K  
64K x 8 Bit  
X24513  
1MHz 2-Wire Serial EEPROM with Block Lock™  
FEATURES  
DESCRIPTION  
• Save critical data with programmable block lock  
protection  
—Block lock (first page, first 2 pages, first 4  
pages, first 8 pages, 1/4, 1/2, or all of EEPROM  
array)  
The X24513 is a CMOS Serial EEPROM, internally  
organized 64K x 8. The device features a serial inter-  
face and software protocol allowing operation on a  
simple two wire bus.  
Two device select inputs (S –S ) allow up to eight  
0
1
—Software write protection  
devices to share a common two wire bus.  
—Programmable hardware write protect  
• In circuit programmable ROM mode  
• 1MHz 2-wire serial interface  
—Schmitt trigger input noise suppression  
—Output slope control for ground bounce noise  
elimination  
• Longer battery life with lower power  
—Active read current less than 1µA  
—Active write current less than 3µA  
—Standby current less than 1µA  
• 2.5V to 5.5V power supply versions  
• 128-byte page write mode  
A Write Protect Register at the highest address location,  
FFFFh, provides three write protection features: Software  
Write Protect, Block Lock Protect, and Programmable  
Hardware Write Protect. The Software Write Protect  
feature prevents any nonvolatile writes to the device  
until the WEL bit in the Write Protect Register is set.  
The Block Lock Protection feature gives the user eight  
array block protect options, set by programming three  
bits in the Write Protect Register. The Programmable  
Hardware Write Protect feature allows the user to  
install the device with WP tied to V , write to and  
CC  
—Minimizes total write time per word  
• Internally organized 64K x 8  
• Bidirectional data transfer protocol  
• Self-timed write cycle  
Typical write cycle time of 5ms  
• High reliability  
—Endurance: 100,000 cycles  
—Data retention: 100 years  
• 8-lead XBGA, 20-lead SOIC (JEDEC),  
20-lead TSSOP  
Block Lock the desired portions of the memory array in  
circuit, and then enable the In Circuit Programmable  
ROM Mode by programming the WPEN bit HIGH in the  
Write Protect Register. After this, the Block Locked  
portions of the array, including the Write Protect Register  
itself, are protected from being erased if WP is high.  
Xicor EEPROMs are designed and tested for applica-  
tions requiring extended endurance. Inherent data  
retention is greater than 100 years.  
BLOCK DIAGRAM  
Data Register  
Serial EEPROM Data  
and Address (SDA)  
Command  
Y Decode Logic  
SCL  
Page  
Decode  
Logic  
Decode  
and  
Control  
Logic  
Block Lock and  
Write Protect  
Control Logic  
Serial EEPROM  
Array  
64K X 8  
Write  
Protect  
Register  
Device  
Select  
Logic  
S
S
1
0
Write Voltage  
Control  
WP  
Characteristics subject to change without notice. 1 of 18  
REV 1.1 9/8/00  
www.xicor.com  

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