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X24512B-2.5 PDF预览

X24512B-2.5

更新时间: 2024-10-03 19:38:43
品牌 Logo 应用领域
XICOR 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟内存集成电路
页数 文件大小 规格书
16页 146K
描述
EEPROM, 64KX8, Serial, CMOS, PBGA8, XBGA-8

X24512B-2.5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:XBGA-8Reach Compliance Code:unknown
风险等级:5.92最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:100耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PBGA-B8JESD-609代码:e0
长度:3.4798 mm内存密度:524288 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA8,2X4(UNSPEC)封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/5 V
认证状态:Not Qualified串行总线类型:I2C
最大待机电流:0.001 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:2 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE
Base Number Matches:1

X24512B-2.5 数据手册

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Preliminary Information  
512K  
64K x 8 Bit  
X24512  
1MHz 2-Wire Serial EEPROM  
DESCRIPTION  
FEATURES  
• 1MHz 2-wire serial interface  
—Schmitt trigger input noise suppression  
—Output slope control for ground bounce noise  
elimination  
The X24512 is a CMOS Serial EEPROM, internally  
organized 64K x 8. The device features a serial inter-  
face and software protocol allowing operation on a  
simple two wire bus.  
• Longer battery life with lower power  
—Active read current less than 1mA  
—Active write current less than 3mA  
—Standby current less than 1µA  
• 2.5V to 5.5V power supply versions  
• 128-byte page write mode  
—Minimizes total write time per word  
• Internally organized 64K x 8  
• Bidirectional data transfer protocol  
• Self-timed write cycle  
Typical write cycle time of 5ms  
• High reliability  
—Endurance: 100,000 cycles  
—Data retention: 100 years  
• 8-lead XBGA  
Two device select inputs (S –S ) allow up to four  
devices to share a common two wire bus.  
0
1
These pins have internal pull downs, so they are read  
as LOW if not connected.  
A WP pin, when pulled HIGH prevents any nonvolatile  
writes to the array. When not connected WP is pulled  
LOW, so the device is not normally protected.  
Xicor EEPROMs are designed and tested for applica-  
tions requiring extended endurance. Inherent data  
retention is greater than 100 years.  
• 20-lead SOIC (JEDEC)  
• 20-lead TSSOP  
BLOCK DIAGRAM  
Data Register  
Serial EEPROM Data  
and Address (SDA)  
Y Decode Logic  
Command  
SCL  
Decode  
Page  
Decode  
Logic  
and  
Control  
Logic  
Write Protect  
Control Logic  
Serial EEPROM  
Array  
Device  
Select  
Logic  
64K x 8  
S
S
1
0
Write Voltage  
Control  
WP  
Characteristics subject to change without notice. 1 of 16  
REV 1.1 9/7/00  
www.xicor.com  

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