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X2016PI-45 PDF预览

X2016PI-45

更新时间: 2024-01-13 10:00:18
品牌 Logo 应用领域
XICOR /
页数 文件大小 规格书
21页 515K
描述
Memory IC,

X2016PI-45 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.83Base Number Matches:1

X2016PI-45 数据手册

 浏览型号X2016PI-45的Datasheet PDF文件第2页浏览型号X2016PI-45的Datasheet PDF文件第3页浏览型号X2016PI-45的Datasheet PDF文件第4页浏览型号X2016PI-45的Datasheet PDF文件第5页浏览型号X2016PI-45的Datasheet PDF文件第6页浏览型号X2016PI-45的Datasheet PDF文件第7页 
APPLICATION  
NOTE  
A
V A I L A B L E  
AN56  
16K  
2K x 8 Bit  
X20C16  
High Speed AUTOSTORENOVRAM  
FEATURES  
DESCRIPTION  
• Fast access time: 35ns, 45ns, 55ns  
• High reliability  
—Endurance: 1,000,000 nonvolatile store  
operations  
—Retention: 100 years minimum  
• AUTOSTORE NOVRAM  
Automatically stores RAM data into the  
The Xicor X20C16 is a 2K x 8 NOVRAM featuring a  
high-speed static RAM overlaid bit-for-bit with a non-  
volatile electrically erasable PROM (EEPROM) and  
the AUTOSTORE feature which automatically saves  
the RAM contents to EEPROM at power-down. The  
X20C16 is fabricated with advanced CMOS floating  
gate technology to achieve high speed with low power  
and wide power-supply margin. The X20C16 features  
a compatible JEDEC approved pinout for byte-wide  
memories, for industry standard RAMs, ROMs,  
EPROMs, and EEPROMs.  
EEPROM array when V  
is detected  
low threshold  
CC  
—User enabled option  
—Open drain autostore status output pin  
• Power-on recall  
—EEPROM data automatically recalled into RAM  
upon power-up  
• Software data protection  
—Locks out inadvertent store operations  
• Low power CMOS  
The NOVRAM design allows data to be easily trans-  
ferred from RAM to EEPROM (store) and EEPROM to  
RAM (recall). The store operation is completed in 5ms  
or less and the recall operation is completed in 10µs or  
less. An automatic array recall operation reloads the  
contents of the EEPROM into RAM upon power-up.  
—Standby: 250µA  
• Infinite EEPROM array recall, and RAM read and  
write cycles  
Xicor NOVRAMS are designed for unlimited write  
operations to RAM, either from the host or recalls from  
EEPROM, and a minimum 1,000,000 store operations  
to the EEPROM. Data retention is specified to be  
greater than 100 years.  
BLOCK DIAGRAM  
V
Sense  
AS  
CC  
EEPROM Array  
High Speed  
Row  
Select  
2K x 8  
SRAM  
Array  
A –A  
3
8
CE  
OE  
WE  
NE  
Control  
Logic  
Column Select  
&
A –A  
0
2
I/OS  
A –A  
9
10  
I/O –I/O  
0
7
Characteristics subject to change without notice. 1 of 21  
REV 1.0 6/21/00  
www.xicor.com  

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