Datasheet > WTR10N600L

WTR10N600L

更新时间： 2024-11-28 14:55:19

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	798K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTR10N600L 数据手册

WTR10N600L-HAF

N-Channel Enhancement Mode MOSFET

Features

• Low R_{DS( ON )}

Drain

• Low Gate Charge

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

• Boost converters

• Synchronous rectifiers

• LED backlighting

Key Parameters

Parameter

BV_DSS

Value

100

Unit

56 @ V_GS= 10 V

60 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

32 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

Drain current

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

Single Pulse Avalanche Energy ²⁾

I_DM

I_AS

3.2

E_AS

℃

Power Dissipation

P_tot

27.8

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.5

Unit

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 8 A, V_GS= 10 V.

℃

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 23/11/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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