Datasheet > WTR10N550LS-CH

WTR10N550LS-CH

更新时间： 2024-11-28 14:54:39

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	572K
描述
功率金氧半电晶体

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WTR10N550LS-CH 数据手册

WTR10N550LS-CH

N-Channel Enhancement Mode MOSFET

Drain

Features

• AEC-Q101 Qualified

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Key Parameters

Parameter

BV_DSS

Value

100

Unit

55 @ V_GS= 10 V

65 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

41.5 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

I_DM

I_AS

9.8

Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

℃

P_D

33.4

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.7

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_AS= 9.8 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 19/10/2022 Rev: 01

12 3 4 5 6 7

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