Datasheet > WTR10N1K1LS-CH

WTR10N1K1LS-CH

更新时间： 2024-11-28 14:54:47

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	542K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTR10N1K1LS-CH 数据手册

WTR10N1K1LS-CH

N-Channel Enhancement Mode MOSFET

Drain

Features

• AEC-Q101 Qualified

• Surface-mounted package

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Applications

• BLDC Motor drive applications

• Battery powered circuits

• Synchronous rectifier applications

• Resonant mode power supplies

Key Parameters

Parameter

BV_DSS

Value

100

Unit

115 @ V_GS= 10 V

125 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

20 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

4.7

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

3.3

℃

P_D

20.8

T_c= 25℃

Operating Junction and Storage Temperature Range

- 55 to + 150

T_j, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.3 mH, R_g= 25 Ω, I_AS= 4.7 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 11/11/2022 Rev: 01

12 3 4 5 6 7

中文翻译

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