Datasheet > WTR06N160L

WTR06N160L

更新时间： 2024-09-17 14:52:43

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	686K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTR06N160L 数据手册

WTR06N160L-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• High-speed switching characteristics

• Low on-resistance

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Applications

Source

• AC-DC switching power supply

• DC-DC power converter

• High-voltage H-bridge PWM motor drive

Key Parameters

Parameter

BV_DSS

Value

Unit

16 @ V_GS= 10 V

20 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

43 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

I_DM

I_AS

130

E_AS

20.4

℃

P_D

83.3

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

1.5

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25℃, L = 0.1 mH, R_g= 25 Ω, I_AS= 20 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 12/07/2022 Rev: 03

12 3 4 5 6 7

中文翻译

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