Datasheet > WTR04P400LS

WTR04P400LS

更新时间： 2024-11-28 14:55:47

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	567K
描述
功率金氧半电晶体

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WTR04P400LS 数据手册

WTR04P400LS-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Source

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

Key Parameters

Parameter

-BV_DSS

Value

Unit

40 @ -V_GS= 10 V

50 @ -V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

19 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

12.6

T_c= 25°C

T_c= 100°C

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

16.8

E_AS

14.1

℃

T_c= 25°C

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.8

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 16.8 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 16/03/2023 Rev: 02

12 3 4 5 6 7

中文翻译

下载PDF

与WTR04P400LS相关器件

型号	品牌	获取价格	描述	数据表
WTR04P700LS	SWST	获取价格	功率金氧半电晶体
WTR06N160L	SWST	获取价格	功率金氧半电晶体
WTR06N180LS	SWST	获取价格	功率金氧半电晶体
WTR06N180LS-CH	SWST	获取价格	功率金氧半电晶体
WTR06N300LS	SWST	获取价格	功率金氧半电晶体
WTR06N300LS-CH	SWST	获取价格	功率金氧半电晶体
WTR06N750LS	SWST	获取价格	功率金氧半电晶体
WTR06N750LS-CH	SWST	获取价格	功率金氧半电晶体
WTR06P1K4L	SWST	获取价格	功率金氧半电晶体
WTR06P1K4L-CH	SWST	获取价格	功率金氧半电晶体