Datasheet > WTR03N030LS

WTR03N030LS

更新时间： 2024-09-17 14:52:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	948K
描述
功率金氧半电晶体

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

WTR03N030LS 数据手册

WTR03N030LS-HAF

N-Channel Enhancement Mode MOSFET

Features

• Low R_{DS( ON )}

Drain

• Low Miller Charge

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

1.Gate 2.Drain 3.Source

TO-252 Plastic Package

• Motor/Body Load Control

• Load Switch

Source

• DC-DC converters and Off-line UPS

Key Parameters

Parameter

BV_DSS

Value

Unit

3.1 @ V_GS= 10 V

4.2 @ V_GS= 4.5 V

1.5

mΩ

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

79 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

V_DS

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Continuous Drain Current

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

210

Single Pulse Avalanche Energy ²⁾

E_AS

T_c= 25℃

T_c= 100℃

34.7

13.8

P_D

Power Dissipation

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

℃

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.6

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 40 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 20/02/2021 Rev: 02

12 3 4 5 6 7 8

中文翻译

下载PDF

与WTR03N030LS相关器件

型号	品牌	获取价格	描述	数据表
WTR03N039L	SWST	获取价格	功率金氧半电晶体
WTR03N040LS	SWST	获取价格	功率金氧半电晶体
WTR03N055L	SWST	获取价格	功率金氧半电晶体
WTR03N056L	SWST	获取价格	功率金氧半电晶体
WTR03N095LS	SWST	获取价格	功率金氧半电晶体
WTR03P055LS	SWST	获取价格	功率金氧半电晶体
WTR03P075L	SWST	获取价格	功率金氧半电晶体
WTR03P080LS	SWST	获取价格	功率金氧半电晶体
WTR03P080LS-CH	SWST	获取价格	功率金氧半电晶体
WTR03P150LS	SWST	获取价格	功率金氧半电晶体