Datasheet > WTQ06N900LK

WTQ06N900LK

更新时间： 2024-11-28 14:53:43

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	747K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTQ06N900LK 数据手册

WTQ06N900LK-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

• Typical ESD Protection HBM Class 1C

Source

1.Gate 2.Drain 3.Source 4.Drain

SOT-223 Plastic Package

Classification Voltage Range(V)

< 125

Key Parameters

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Parameter

BV_DSS

Value

Unit

90 @ V_GS= 10 V

107 @ V_GS= 4.5 V

1.5

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

6.8 @ V_GS= 10 V

Applications

• Battery management

• High speed switch

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

7.2

4.5

T_c= 25℃

T_c= 100℃

Continuous Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

3.5

Single Pulse Avalanche Energy ²⁾

E_AS

0.6

℃

Power Dissipation

P_D

9.4

T_c= 25℃

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

13.2

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 3.5 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 24/10/2022 Rev: 02

12 3 4 5 6 7

中文翻译

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