Datasheet > WTQ03P055LS

WTQ03P055LS

更新时间： 2024-11-28 14:51:55

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	605K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTQ03P055LS 数据手册

WTQ03P055LS-HAF

P-Channel Enhancement Mode MOSFET

Features

Drain

• Low On-Resistance

• Low Miller Charge

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

Applications

Source

1.Gate 2.Drain 3.Source 4.Drain

SOT-223 Plastic Package

• Motor/Body Load Control

• Load Switch

Key Parameters

Parameter

-BV_DSS

Value

Unit

7 @ -V_GS= 10 V

9 @ -V_GS= 4.5 V

1.4

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

146 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

49.7

T_c= 25°C

T_c= 100°C

Drain Current

-I_D

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

300

58.8

E_AS

172.8

℃

T_c= 25°C

P_D

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

5.6

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25°C, L = 0.1 mH, R_g= 25 Ω, I_D= 58.8 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 25/05/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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