Datasheet > WTPB8A60CW

WTPB8A60CW

更新时间： 2024-10-30 05:52:11

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描述
Bi-Directional Triode Thyristor

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中文翻译

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WTPB8A60CW 数据手册

WTPB8A60CW

Bi-Directional Triode Thyristor

Features

■ Repetitive Peak off-State Voltage:600V

■R.M.S On-State Current(I_T(RMS)=8A

■ Low on-state voltage: V_TM=1.55V(Max.)@ I_T=11A

■ High Commutation dV/dt.

General Description

General purpose switching and phase control applications.

These devices are intended to be interfaced directly to micro-

controllers, logic integrated circuits and other low power gate

trigger circuits such as fan speed and temperature modulation

control, lighting control and static switching relay.

Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)

Symbol

V_DRM

I_T(RMS)

I_TSM

Parameter

Value

Units

Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)

Forward Current RMS (All Conduction Angles, Tc=58℃)

Peak Forward Surge Current, (1/2 Cycle, Sine Wave, 50/60 Hz)

Circuit Fusing Considerations (t p= 10 ms)

600

80/84

I²t

A²s

P_GM

Peak Gate Power — Forward, (Tc = 58°C,Pulse with≤1.0us)

Average Gate Power — Forward, (Over any 20ms period)

Peak Gate Current — Forward, Tj = 125°C (20 µs, 120 PPS)

Peak Gate Voltage — Reverse, Tj = 125°C (20 µs, 120 PPS)

Junction Temperature

P_G(AV)

I_FGM

V_RGM

T_J,

-40~125

-40~150

℃

T_stg

Storage Temperature

Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC

may switch to the on-state. The rate of rise of current should not exceed 3A/us.

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

1.6

R_QJC

R_QJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

℃/W

Rev. B Nov.2008

1/5

12 3 4 5

中文翻译

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