Datasheet > WTPB4A60SW

WTPB4A60SW

更新时间： 2024-11-29 05:55:47

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	487K
描述
Bi-Directional Triode Thyristor

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中文翻译

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WTPB4A60SW 数据手册

WTPB4A60SW

Bi-Directional Triode Thyristor

Features

◆

Repetitive Peak Off-State Voltage : 600V

R.M.S On-State Current ( IT(RMS)= 4 A )

Low On-State Voltage (1.6V(Typ.) @ I_TM

High Commutation dv/dt

)

◆

High Junction temperature(T_J=150℃)

General Description

Standard gate triggering Triac is suitable for direct coupling to

TTL, HTL, CMOS and application such as various logic

functions, low power AC switching applications, such as fan

speed, small light controllers and home appliance equipment.

Absolute Maximum Ratings (T_J= 25°C unless otherwise specified)

Symbol

Parameter

Condition

Ratings Units

Repetitive Peak Off-State Voltage

R.M.S On-State Current

600

_DRM/V_RRM

I_T(RMS)

T_J= 110 °C

4.0

One cycle, Peak value, non-

50Hz

60Hz

I_TSM

Surge On-State Current

repetitive full cycle

I²t

P_GM

P_G(AV)

I_GM

5.1

I t

A s

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

T_J= 125 °C

4.0

V_GM

T_J

Peak Gate Voltage

7.0

Operating Junction Temperature

Storage Temperature

-40~+150

℃

T_STG

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

R_θJA

Thermal Resistance Junction to Case(DC)

Thermal Resistance Junction to Ambient(DC)

2.6

℃/W

Jan 2009. Rev. 0

T02-1

12 3 4 5

中文翻译

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