Datasheet > WTPB12A60BW

WTPB12A60BW

更新时间： 2024-11-27 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		栅
页数	文件大小	规格书
6页	435K
描述
Sensitive Gate Bi-Directional Triode Thyristor

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WTPB12A60BW 数据手册

WTPB12A60BW

Sensitive Gate

Bi-Directional Triode Thyristor

Features

■ Repetitive Peak off-State Voltage: 600V

■ R.M.S On-State Current(I_T(RMS)=12A

■ Low on-state voltage: V_TM=1.55V(Max.)@ I_T=17A

■ High Commutation dV/dt.

■

Halogen free(WTPB12A60BW-HF)

General Description

General purpose swithhing and phase control applications.

These devices are intended to be interfaced directly to

micro-controllers, logic integrated circuits and other low power

gate trigger circuits such as fan speed and temperature

modulation control, lighting control and static switching relay.

Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)

Symbol

V_DRM/V_PRM

I_T(RMS)

Parameter

Value

600

Units

Peak Repetitive Forward Blocking Voltage(gate open)

(Note 1)

Forward Current RMS (All Conduction Angles, TJ=58℃)

I_TSM

Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)

Circuit Fusing Considerations (tp= 10 ms)

120/126

A²s

I²t

100

P_GM

Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)

Average Gate Power — Forward, (Over any 20ms period)

P_G(AV)

Critical rate of rise of on-state current

T_J=125℃

dI/dt

A/μs

I_TM= 20A; I_G= 200mA; dI_G/dt = 200mA/μs

I_FGM

V_RGM

T_J,

Peak Gate Current — Forward, T_J= 125°C (20 µs, 120 PPS)

Peak Gate Voltage — Reverse, T_J= 125°C (20 µs, 120 PPS)

Junction Temperature

-40~125

-40~150

℃

T_stg

Storage Temperature

Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may

swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

R_QJC

R_QJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.4

℃/W

Rev. A Apr.2011

T03-3

12 3 4 5 6

中文翻译

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