Datasheet > WTPA16A60CW

WTPA16A60CW

更新时间： 2024-10-30 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
5页	359K
描述
Bi-Directional Triode Thyristor

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WTPA16A60CW 数据手册

WTPA16A60CW

Bi-Directional Triode Thyristor

Features

■ Repetitive Peak off-State Voltage: 600V

■ R.M.S On-State Current(I_T(RMS)=16A

■ Low on-state voltage: V_TM=1.55V(Max.)@ I_T=22.5A

■ High Commutation dV/dt.

Tab

General Description

General purpose swithhing and phase control applications. These

devices are intended to be interfaced directly to micro-controllers,

logic integrated circuits and other low power gate trigger circuits

such as fan speed and temperature modulation control, lighting

control and static switching relay.

The -W series are specially recommended for use on inductive loads,

thanks to their high commutation performances. By using an internal

ceramic pad, the WTPA series provides voltage insulated tab (rated

at 2500V RMS). complying with UL standards (file ref.:E347423)

TO220ISO

Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)

Symbol

V_DRM/V_PRM

I_T(RMS)

Parameter

Value

Units

Peak Repetitive Forward Blocking Voltage(gate open) (Note 1)

600

Forward Current RMS (All Conduction Angles, TJ=58℃)

I_TSM

I²t

Peak Forward Surge Current, (full Cycle, Sine Wave, 50/60 Hz)

Circuit Fusing Considerations (tp= 10 ms)

160/168

A²s

144

P_GM

P_G(AV)

Peak Gate Power — Forward, (TJ = 58°C,Pulse with≤1.0us)

Average Gate Power — Forward, (Over any 20ms period)

Critical rate of rise of on-state current

T_J=125℃

dI/dt

A/μs

I_TM= 20A; I_G= 200mA; dI_G/dt = 200mA/µs

I_FGM

V_RGM

T_J,

Peak Gate Current — Forward, T_J= 125°C (20 µs, 120 PPS)

Peak Gate Voltage — Reverse, T_J= 125°C (20 µs, 120 PPS)

Junction Temperature

-40~125

-40~150

℃

T_stg

Storage Temperature

Note1: .Although not recommended, off-state voltages up to 800V may be applied without damage, but the TRIAC may

swiTJh to the on-state. The rate of rise of current should not exceed 15A/us.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

R_QJC

R_QJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.6

℃/W

Rev. A Sep.2010

T03-3

12 3 4 5

中文翻译

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