Datasheet > WTP882

WTP882

更新时间： 2024-10-30 03:15:59

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
5页	275K
描述
PNP/NPN Epitaxial Planar Transistors

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中文翻译

获取价格

数据手册

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WTP882 数据手册

WTP772

WTP882

PNP/NPN Epitaxial Planar Transistors

TO-251

P b

Lead(Pb)-Free

1.BASE

2.COLLECTOR

3.EMITTER

1 2 3

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current (DC)

Symbol

PNP/WTP772

Unit

Vdc

Adc

NPN/WTP882

5.0

3.0

-30

-40

-5.0

-3.0

CEO

CBO

EBO

C(DC)

Collector Current (Pulse)¹

(Pulse)

-7.0

-0.6

Adc

7.0

0.6

Adc

Base Current

Total Device Dissipation Tc=25 C

1.4

T =25°C

150

Junction Temperature

Storage, Temperature

Tstg

-55 to +150

Device Marking

WTP772=B 772

WTP882=D882

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)

-30/30

Vdc

(BR)CEO

-40/40

Vdc

Collector-Base Breakdown Voltage (I = -100/100 µAdc, I =0)

(BR)CBO

Vdc

-5.0/5.0

Emitter-Base Breakdown Voltage (I = -100/100 µAdc, I =0)

(BR)EBO

uAdc

CE0

CBO

EBO

-1.0/1.0

Collector Cutoff Current (V = -30/30 Vdc, I =0)

uAdc

Collector Cutoff Current (V = -40/40 Vdc, I =0)

-1.0/1.0 uAdc

Emitter Cutoff Current (V = -6.0/6.0V c, I =0)

NOTE: 1.PW 350us, duty cycle 2%

WEITRON

http://www.weitron.com.tw

12 3 4 5

中文翻译

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