Datasheet > WTP772_08

WTP772_08

更新时间： 2024-11-29 08:07:31

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
5页	455K
描述
PNP Epitaxial Planar Transistors

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中文翻译

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数据手册

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WTP772_08 数据手册

WTP772

PNP Epitaxial Planar Transistors

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

1 2 3

TO-251

ABSOLUTE MAXIMUM RATINGS

(Ta=25ºC)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current (DC)

Symbol

PNP/WTP772

Unit

-30

-40

-5.0

-3.0

CEO

CBO

EBO

C(DC)

Collector Current (Pulse)¹

(Pulse)

-7.0

Base Current

-0.6

Total Device Dissipation Tc=25°C

1.4

T =25°C

150

Junction Temperature

Storage, Temperature

Tstg

-55 to +150

Device Marking

WTP772 = 772

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10mA , I =0)

-30

(BR)CEO

-40

Collector-Base Breakdown Voltage (I = -100 µA , I =0)

(BR)CBO

Emitter-Base Breakdown Voltage (I = -100µA , I =0)

(BR)EBO

-5.0

µA

-1.0

Collector Cutoff Current (V = -30 V , I =0)

CBO

Emitter Cutoff Current (V = -3.0 V, I =0)

EBO

NOTE : 1.P W 380us, duty cycle 2%

WEITRON

http://www.weitron.com.tw

1/5

12-Mar-08

12 3 4 5

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