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WTN9973 PDF预览

WTN9973

更新时间: 2024-10-30 03:15:59
品牌 Logo 应用领域
WEITRON /
页数 文件大小 规格书
6页 865K
描述
Surface Mount N-Channel Enhancement Mode Power MOSFET

WTN9973 数据手册

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WTN9973  
Surface Mount N-Channel  
DRAIN CURRENT  
3.9 AMPERES  
Enhancement Mode Power MOSFET  
2,4 DRAIN  
DRAIN SOURCE VOLTAGE  
60 VOLTAGE  
1
4
GATE  
1.GATE  
1
2.DRAIN  
3.SOURCE  
4.DRAIN  
2
3
3
SOURCE  
Features:  
SOT-223  
*Super high dense cell design for low RDS(ON)  
RDS(ON)<80mΩ@VGS=10V  
*Simple Drive Requirement  
*Low Gate Charge  
*SOT-223 Package  
Maximum Ratings(TA=25℃ Unless Otherwise Specified)  
Rating  
Symbol  
Value  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current3  
60  
VDS  
VGS  
V
±20  
3.9  
2.5  
20  
,VGS@10V(TA=25℃)  
,VGS@10V(TA=70℃)  
ID  
A
Pulsed Drain Current1,2  
IDM  
PD  
Total Power Dissipation(TA=25 )  
2.7  
45  
W
℃/W  
Maximum Junction-ambient3  
JA  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
-55~+150  
Device Marking  
WTN9973=9973  
1/6  
19-Apr-05  
WEITRON  
http:www.weitron.com.tw  

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