Datasheet > WTN1A80

WTN1A80

更新时间： 2024-09-13 07:20:11

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
4页	263K
描述
Bi-Directional Triode Thyristor

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中文翻译

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WTN1A80 数据手册

WTN1A80

Bi-Directional Triode Thyristor

Features

■ Repetitive Peak off-State Voltage:800V

■

R.M.S On-State Current(I =1A

T(RMS)

■ Low on-state voltage: V =1.2(typ.)@ I

■ Low reverse and forward blocking current:

=500uA@TC=125℃

DRM

■ Low holding current: I =4mA (typ.)

■

High Commutation dV/dt.

General Description

General purpose switching and phase control applications.

These devices are intended to be interfaced directly to micro-

controllers, logic integrated circuits and other low power gate

trigger circuits such as fan speed and temperature modulation

control, lighting control and static switching relay.

Absolute Maximum Ratings (T_J=25℃ unless otherwise specified)

symbol

V_DRM

I_T(RMS)

I_TSM

Parameter

Repetitive Peak Off-State Voltage

R.M.S On-State Current

Surge On-State Current

I²t

condition

Ratings

800

Units

Tc=86℃

Full sine wave, 20/16.7ms

12.5/13.8

1.28

5.0

I²t

A²s

P_GM

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

P_G(AV)

I_GM

0.5

2.0

V_GM

Peak Gate Voltage

T_J

Operating Junction Temperature

Storage Temperature

125

℃

T_STG

-40~150

Thermal Characteristics

Symbol

Parameter

Value

Units

R_θJc

Thermal Resistance Junction to Case

℃/W

Rev.A Aug.2011

12 3 4

中文翻译

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