Datasheet > WTM882GR

WTM882GR

更新时间： 2024-11-06 05:12:03

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	239K
描述
Small Signal Bipolar Transistor

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中文翻译

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技术参数
数据手册

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WTM882GR 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

WTM882GR 数据手册

WTM772

WTM882

PNP/NPN Epitaxial Planar Transistors

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

WTM772

WTM882

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

PNP/WTM772

Unit

Vdc

Adc

NPN/WTM882

-30

-40

CEO

6.0

3.0

CBO

-5.0

-3.0

EBO

Collector Current (DC)

C(DC)

°C/W

Total Device Dissipation T =25 C

0.5

Thermal Resistance, Junction to Ambient

Junction Temperature

250

150

θJA

Storage,Temperature

Tstg

-55 to +150

Device Marking

WTM772=B772 , WTM882=D882

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10/10 mAdc, I =0)

-30/30

Vdc

(BR)CEO

-40/40

Vdc

Collector-Base Breakdown Voltage (I = -100/100 uAdc, I =0)

(BR)CBO

Vdc

-5.0/6.0

Emitter-Base Breakdown Voltage (I = -100/100 uAdc, I =0)

(BR)EBO

uAdc

CE0

-10/10

-1.0/1.0

Collector Cutoff Current (V = -30/30 Vdc, I =0)

uAdc

Collector Cutoff Current (V = -40/40 Vdc, I =0)

CBO

EBO

Emitter Cutoff Current (V = -6.0/6.0V c, I =0)

WEITRON

http://www.weitron.com.tw

14-Aug-2012

1/5

12 3 4 5

中文翻译

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