Datasheet > WTM649A

WTM649A

更新时间： 2024-10-01 06:02:03

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	400K
描述
PNP Epitaxial Pl anar Transistors

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WTM649A 数据手册

WTM649A

PNP Epitaxial Planar Transistors

SOT-89

P b

Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

ABSOLUTE MAXIMUM RATINGS (T =25˚C)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Limits

Unit

CBO

-180

-160

-5

CEO

EBO

-1.5

-3

C(DC)

Collector Current

C(Pulse)

Collector Power Dissipation

Junction Temperature

˚C

150

-55 to +150

Storage Temperature Range

stg

Device Marking

WTM649A=649A

ELECTRICAL CHARACTERISTICS(T =25˚Cunless otherwise noted)

Min

Typ

Parameter

Symbol

Max

Unit

Collector-Base Breakdown Voltage

-180

CBO

CEO

EBO

I =-1mA, I =0

Collector-Emitter Breakdown Voltage

I =-10mA, I =0

-160

-5

Emitter-Base Breakdown Voltage

I =-1mA, I =0

Collector Cutoﬀ Current

-10

µA

CBO

=-160V, I =0

WEITRON

http://www.weitron.com.tw

1/4

01-Aug-05

12 3 4

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