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WTM610D1K1LS PDF预览

WTM610D1K1LS

更新时间: 2024-10-02 14:51:03
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 552K
描述
功率金氧半电晶体

WTM610D1K1LS 数据手册

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WTM610D1K1LS-HAF  
Dual N-Channel Enhancement Mode MOSFET  
Features  
• Surface-mounted package  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Applications  
• BLDC Motor drive applications  
• Battery powered circuits  
• Synchronous rectifier applications  
• Resonant mode power supplies  
Q1:1.Source 2.Gate 7.Drain 8.Drain  
Q2:3.Source 4.Gate 5.Drain 6.Drain  
DFN5060 Plastic Package  
Key Parameters(Q1/Q2)  
Parameter  
BVDSS  
Value  
100  
Unit  
V
115 @ VGS = 10 V  
125 @ VGS = 4.5 V  
1.6  
RDS(ON) Max  
mΩ  
VGS(th) typ  
Qg typ  
V
19 @ VGS = 10 V  
nC  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)(Q1/Q2)  
Symbol  
Value  
100  
Unit  
V
Parameter  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
± 20  
V
Tc = 25℃  
7.2  
4.5  
ID  
A
Drain Current  
Tc = 100℃  
Peak Drain Current, Pulsed 1)  
Single-Pulse Avalanche Current  
Single-Pulse Avalanche Energy 2)  
Power Dissipation  
IDM  
IAS  
20  
4.9  
A
A
EAS  
3.6  
mJ  
W
Tc = 25℃  
PD  
14.8  
- 55 to + 150  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
Thermal Characteristics(Q1/Q2)  
Parameter  
Symbol  
RθJC  
Max.  
8.4  
Unit  
/W  
/W  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
RθJA  
62  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.  
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.3 mH, Rg = 25 Ω, IAS = 4.9 A, VGS = 10 V.  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 27/02/2023 Rev: 02  

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