Datasheet > WTM510N039S

WTM510N039S

更新时间： 2024-11-21 14:55:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	787K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM510N039S 数据手册

WTM510N039S-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low Miller Capacitance

• Fully Characterized Capacitance and Avalanche

• Halogen and Antimony Free(HAF), RoHS compliant

Gate

Application

Source

• BLDC Motor drive applications

• Battery powered circuits

• Synchronous rectifier applications

• Resonant mode power supplies

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Key Parameters

Parameter

BV_DSS

Value

100

Unit

4.3 @ V_GS= 10 V

6.1 @ V_GS= 7 V

mΩ

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

112@ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

100

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Single Pulse Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation.

I_DM

I_AS

400

290

E_AS

℃

P_tot

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

2.5

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 50 Ω, I_D= 34 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 17/08/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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