Datasheet > WTM506N750LS

WTM506N750LS

更新时间： 2023-12-06 20:11:44

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	556K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM506N750LS 数据手册

WTM506N750LS-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low threshold drive

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Applications

Source

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

• Switching applications

• DC-DC converters for Telecom and Computer

Key Parameters

Parameter

BV_DSS

Value

Unit

75 @ V_GS= 10 V

90 @ V_GS= 4.5 V

1.7

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

8 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

9.3

5.8

I_D

Drain Current

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

I_DM

I_AS

5.6

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

1.5

℃

P_D

13.4

T_c= 25℃

- 55 to + 150

Operating Junction and Storage Temperature Range

T_j, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

9.3

Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient ^{3) .}Steady State

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 5.6 A, V_GS= 10 V.

℃

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 26/10/2022 Rev: 02

12 3 4 5 6 7

中文翻译

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