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WTM506N180LS PDF预览

WTM506N180LS

更新时间: 2024-11-21 14:55:11
品牌 Logo 应用领域
先科 - SWST 晶体
页数 文件大小 规格书
7页 609K
描述
功率金氧半电晶体

WTM506N180LS 数据手册

 浏览型号WTM506N180LS的Datasheet PDF文件第2页浏览型号WTM506N180LS的Datasheet PDF文件第3页浏览型号WTM506N180LS的Datasheet PDF文件第4页浏览型号WTM506N180LS的Datasheet PDF文件第5页浏览型号WTM506N180LS的Datasheet PDF文件第6页浏览型号WTM506N180LS的Datasheet PDF文件第7页 
WTM506N180LS-HAF  
N-Channel Enhancement Mode MOSFET  
Drain  
Features  
• Low RDS(ON)  
• Surface-mounted package  
Gate  
• Low Gate-Source Threshold Voltage  
• Halogen and Antimony Free(HAF),  
RoHS compliant  
Source  
1.Source 2.Source 3.Source 4.Gate  
5.Drain 6.Drain 7.Drain 8.Drain  
DFN5060 Plastic Package  
Key Parameters  
Parameter  
BVDSS  
Value  
60  
Unit  
V
16 @ VGS = 10 V  
18 @ VGS = 4.5 V  
1.5  
RDS(ON) Max  
mΩ  
VGS(th) typ  
Qg typ  
V
37 @ VGS = 10 V  
nC  
Absolute Maximum Ratings(at Ta = 25unless otherwise specified)  
Parameter  
Symbol  
VDS  
Value  
60  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
± 20  
V
Tc = 25℃  
33  
23  
Drain Current  
ID  
A
Tc = 100℃  
Peak Drain Current, Pulsed 1)  
Avalanche Current  
IDM  
IAS  
100  
20.3  
A
A
Single Pulse Avalanche Energy 2)  
EAS  
20.6  
mJ  
W
Power Dissipation  
Ptot  
37.5  
Tc = 25℃  
Operating Junction and Storage Temperature Range  
TJ, Tstg  
- 55 to + 175  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Max.  
4
Unit  
℃/W  
℃/W  
Thermal Resistance from Junction to Case  
Thermal Resistance from Junction to Ambient 3)  
RθJA  
40  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 175.  
2) Limited by TJ(MAX), starting TJ = 25 , L = 0.1 mH, Rg = 25 Ω, IAS = 20.3 A, VGS = 10 V.  
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.  
®
1 / 7  
Dated: 07/09/2023 Rev: 03  

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