Datasheet > WTM506N031L

WTM506N031L

更新时间： 2024-11-21 14:55:07

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	1270K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM506N031L 数据手册

WTM506N031L-HAF

N-Channel Enhancement Mode MOSFET

Features

• Optimized for synchronous rectification low

Input capacitance

Drain

• Low switching charge

• Low miller capacitance

Gate

• Fully characterized capacitance and avalanche

• Halogen and Antimony Free(HAF), RoHS compliant

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Source

Applications

• Battery powered circuits

• BLDC Motor drive applications

• Half-bridge and full-bridge topologies

• Synchronous rectifier applications

• Resonant mode power supplies

Key Parameters

Parameter

BV_DSS

Value

Unit

4 @ V_GS= 10 V

6 @ V_GS= 4.5 V

1.6

mΩ

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

51.4 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

Drain Current Continuous

I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Power Dissipation

300

34.7

I_DM

P_D

T_c= 25℃

I_AS

Avalanche Current, Single Pulse

Avalanche Energy, Single Pulse ²⁾

E_AS

101

℃

Operating Junction and Storage Temperature Range

- 55 to + 150

T_j, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

3.6

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%.

R_θJA

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 45 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 28/09/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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