Datasheet > WTM504P700LS

WTM504P700LS

更新时间： 2024-11-06 14:55:23

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	585K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM504P700LS 数据手册

WTM504P700LS-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Low Gate-Source Threshold Voltage

• Halogen and Antimony Free(HAF),

Gate

RoHS compliant

1.Source 2.Source 3.Source 4.Gate

5.Drain 6.Drain 7.Drain 8.Drain

DFN5060 Plastic Package

Source

Key Parameters

Parameter

-V_(BR)DSS

Value

Unit

86 @ -V_GS= 10 V

134 @ -V_GS= 4.5 V

1.7

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

8.5 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Symbol

Value

Unit

Parameter

-V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

8.8

5.5

T_c= 25℃

T_c= 100℃

-I_D

Drain Current

Peak Drain Current ¹⁾

Avalanche Current

Avalanche Energy ²⁾

Power Dissipation

-I_DM

-I_AS

9.1

E_AS

4.1

℃

P_D

12.1

T_c= 25℃

T_J,T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Symbol

R_θJC

Max.

10.2

Unit

Parameter

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, -I_AS= 9.1 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 23/06/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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