Datasheet > WTM3E6N160L

WTM3E6N160L

更新时间： 2024-09-26 14:55:03

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	615K
描述
功率金氧半电晶体

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数据手册

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WTM3E6N160L 数据手册

WTM3E6N160L-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Low R_{DS( ON )}

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Application

•

Networking

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Source

LED Lighting Applications

Quick Charger Applications

DC-DC Power Management

Key Parameters

Parameter

BV_DSS

Value

Unit

16 @ V_GS= 10 V

30 @ V_GS= 4.5 V

1.5

mΩ

R_DS(ON)Max

V_GS(th)typ

Q_gtyp

14.5 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25°Ϲ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Drain-Gate Voltage

V_GS

+ 20 / -12

T_c= 25℃

Drain Current-Continuous

I_D

T_c= 100℃

Peak Drain Current, Pulsed¹⁾

Power Dissipation

I_DM

P_D

100

T_c= 25℃

27.8

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

I_AS

1.8

E_AS

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.5

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 6 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 26/08/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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