Datasheet > WTM3E6N085L

WTM3E6N085L

更新时间： 2023-12-06 20:03:18

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	498K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM3E6N085L 数据手册

WTM3E6N085L-HAF

N-Channel Enhancement Mode Power MOSFET

Features

• Low R_DS(ON)

Drain

• Low threshold drive

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Applications

Source

• Motor Control

• Synchronous rectifier applications.

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Key Parameters

Parameter

BV_DSS

Value

Unit

9.2 @ V_GS= 10 V

13.4 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

27 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

- 12

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

I_DM

I_AS

100

8.5

E_AS

℃

P_D

T_c= 25℃

Operating Junction and Storage Temperature Range

- 55 to + 150

T_j, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

Unit

Thermal Resistance - Junction to Case

℃

Thermal Resistance - Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_D= 13 A, V_GS= 10 V.

Steady State

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 12/11/2020 Rev: 01

12 3 4 5 6 7 8

中文翻译

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