Datasheet > WTM3E4N200LK

WTM3E4N200LK

更新时间： 2023-12-06 20:03:51

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	585K
描述
功率金氧半电晶体

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数据手册

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WTM3E4N200LK 数据手册

WTM3E4N200LK-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Halogen and Antimony Free(HAF)

Gate

RoHS compliant

• Typical ESD Protection HBM Class 1B

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Source

Classification Voltage Range(V)

< 125

Key Parameters

125 to < 250

250 to < 500

500 to < 1000

1000 to < 2000

2000 to < 4000

4000 to < 8000

≥ 8000

Parameter

BV_DSS

Value

Unit

20.5 @ V_GS= 10 V

27 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

16 @ V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

T_c= 25℃

T_c= 100℃

Drain Current

I_D

Peak Drain Current, Pulsed ¹⁾

Avalanche Current

I_DM

I_AS

15.4

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

11.8

℃

P_D

T_c= 25℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

5.4

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.1 mH, R_g= 25 Ω, I_AS= 15.4 A, V_GS= 10 V.

R_θJA

³⁾Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.

1 / 8

Dated: 02/03/2022 Rev: 01

12 3 4 5 6 7 8

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