Datasheet > WTM310N550LS

WTM310N550LS

更新时间： 2023-12-06 20:09:15

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
8页	613K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM310N550LS 数据手册

WTM310N550LS-HAF

N-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Low Gate-Source Threshold Voltage

Gate

• Halogen and Antimony Free(HAF),

RoHS compliant

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Source

Key Parameters

Parameter

BV_DSS

Value

100

Unit

55 @ V_GS= 10 V

65 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

41.5 @ V_GS= 10 V

Absolute Maximum Ratings(at T_a= 25℃ unless otherwise specified)

Symbol

Value

100

Unit

Parameter

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

± 20

9.4

T_c= 25℃

T_c= 100℃

I_D

Drain Current

Peak Drain Current, Pulsed ¹⁾

I_DM

I_AS

9.8

Avalanche Current

Single Pulse Avalanche Energy ²⁾

Power Dissipation

E_AS

℃

P_D

26.3

T_c= 25℃

T_J, T_stg

- 55 to + 150

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

4.7

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.5 mH, R_g= 25 Ω, I_D= 9.8 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 8

Dated: 27/09/2021 Rev: 01

12 3 4 5 6 7 8

中文翻译

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