Datasheet > WTM310N1K1LS

WTM310N1K1LS

更新时间： 2023-12-06 20:08:32

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	585K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM310N1K1LS 数据手册

WTM310N1K1LS-HAF

N-Channel Enhancement Mode MOSFET

Features

Drain

• Surface-mounted package

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Applications

Source

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

• BLDC Motor drive applications

• Battery powered circuits

• Synchronous rectifier applications

• Resonant mode power supplies

Key Parameters

Parameter

BV_DSS

Value

100

Unit

115 @ V_GS= 10 V

125 @ V_GS= 4.5 V

1.6

R_DS(ON)Max

mΩ

V_GS(th)typ

Q_gtyp

20 @ V_GS= 10 V

Absolute Maximum Ratings (T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

± 20

T_c= 25℃

I_D

Drain Current

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

Power Dissipation

I_DM

I_AS

4.7

E_AS

3.3

℃

T_c= 25℃

P_D

18.5

Operating Junction and Storage Temperature Range

- 55 to + 150

T_j, T_stg

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

6.7

Unit

℃/W

Thermal Resistance from Junction to Case

Thermal Resistance from Junction to Ambient ³⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature T_J(MAX)= 150°C.

²⁾Limited by T_J(MAX), starting T_J= 25 °C, L = 0.3 mH, R_g= 25 Ω, I_AS= 4.7 A, V_GS= 10 V.

R_θJA

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 27/04/2023 Rev: 02

12 3 4 5 6 7

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