WTM306P700LS-CH
P-Channel Enhancement Mode MOSFET
Drain
Features
• AEC-Q101 Qualified
• Surface-mounted package
• Halogen and Antimony Free(HAF),
Gate
RoHS compliant
Source
Applications
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
• Synchronous Buck Converter Applications
Key Parameters
Parameter
-BVDSS
Value
60
Unit
V
70 @ -VGS = 10 V
95 @ -VGS = 4.5 V
1.7
RDS(ON) Max
mΩ
-VGS(th) typ
Qg typ
V
16.5 @ -VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
-VDS
VGS
± 20
12
7.5
V
Tc = 25℃
Drain Current
-ID
A
Tc = 100℃
Peak Drain Current, Pulsed 1)
Power Dissipation
-IDM
PD
35
A
W
A
20
Tc = 25℃
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy 2)
-IAS
17
14
EAS
mJ
℃
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 150
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
6.2
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
RθJA
50
Steady State
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, limited by junction temperature TJ(MAX) = 150℃.
2) Limited by TJ(MAX), starting TJ = 25℃, L = 0.1 mH, Rg = 25 Ω, IAS = 17 A, VGS = 10 V.
3) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.
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Dated: 16/06/2023 Rev: 02