Datasheet > WTM306P700LS

WTM306P700LS

更新时间： 2023-12-06 20:01:06

品牌	Logo	应用领域
先科 - SWST		晶体
页数	文件大小	规格书
7页	592K
描述
功率金氧半电晶体

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中文翻译

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数据手册

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WTM306P700LS 数据手册

WTM306P700LS-HAF

P-Channel Enhancement Mode MOSFET

Drain

Features

• Surface-mounted package

• Halogen and Antimony Free(HAF),

RoHS compliant

Gate

Applications

Source

• Synchronous Buck Converter Applications

1. Source 2. Source 3. Source 4. Gate

5. Drain 6. Drain 7. Drain 8. Drain

DFN3030 Plastic Package

Key Parameters

Parameter

-BV_DSS

Value

Unit

70 @ -V_GS= 10 V

95 @ -V_GS= 4.5 V

1.7

R_DS(ON)Max

mΩ

-V_GS(th)typ

Q_gtyp

16.5 @ -V_GS= 10 V

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

-V_DS

V_GS

± 20

7.5

T_c= 25℃

Drain Current

-I_D

T_c= 100℃

Peak Drain Current, Pulsed ¹⁾

Power Dissipation

-I_DM

P_D

T_c= 25℃

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy ²⁾

-I_AS

E_AS

℃

Operating Junction and Storage Temperature Range

T_j, T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJC

Max.

6.2

Unit

Thermal Resistance from Junction to Case

℃

Thermal Resistance from Junction to Ambient ³⁾

R_θJA

Steady State

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, limited by junction temperature T_J(MAX)= 150℃.

²⁾Limited by T_J(MAX), starting T_J= 25℃, L = 0.1 mH, R_g= 25 Ω, I_AS= 17 A, V_GS= 10 V.

³⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 7

Dated: 16/06/2023 Rev: 02

12 3 4 5 6 7

中文翻译

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