WTM304N055LS-CH
N-Channel Enhancement Mode MOSFET
Drain
Features
• AEC-Q101 Qualified
• Surface-mounted package
• Low Gate-Source Threshold Voltage
• Halogen and Antimony Free(HAF)
RoHS compliant
Gate
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
DFN3030 Plastic Package
Source
Key Parameters
Parameter
BVDSS
Value
40
Unit
V
5.7 @ VGS = 10 V
7 @ VGS = 4.5 V
1.6
RDS(ON) Max
mΩ
VGS(th) typ
Qg typ
V
69.9 @ VGS = 10 V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
VDS
Value
40
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
± 20
52
32
V
Tc = 25℃
Tc = 100℃
Drain Current - Continuous
ID
A
Drain Current Pulsed 1)
Avalanche Current
IDM
IAS
220
20.3
A
A
Single Pulse Avalanche Energy 2)
Power Dissipation
EAS
103
mJ
W
℃
PD
30
Tc = 25℃
Operating Junction and Storage Temperature Range
Tj, Tstg
- 55 to + 175
Thermal Characteristics
Parameter
Symbol
RθJC
Max.
5
Unit
Thermal Resistance from Junction to Case
℃
℃
/W
/W
Thermal Resistance from Junction to Ambient 3)
1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 175°C.
2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.5 mH, Rg = 25 Ω, IAS = 20.3 A, VGS = 10 V.
RθJA
58
3) Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.
®
1 / 7
Dated: 14/06/2023 Rev: 03